报道用光学显微技术观察Czochralski方发生长的新型激光材料Nd:GdVO4晶体中的生长缺陷的种类、形态和分布.这些缺陷包括:包裹物,色心,开裂,台阶面,位错,小角晶界和位错塞积群.讨论了这些缺陷的形成原因,提出了减少生长缺陷的措施.
参考文献
[1] | Jensen T;Ostroumov V G;Meyn J P et al.Spectroscope characterization and laser performance of diode-laserpumped Nd:GdVO4[J].Applied Physics B-Lasers and Optics,1994,58(05):373-379. |
[2] | Shimamura Kiyoshi;Uda Statoshi et al.Growth and characterization of gadolinium vanadate GdVO4 single crystals for laser applications[J].Japanese Journal of Applied Physics,1996,28(03):1832-1835. |
[3] | 祝俐,张怀金,孟宪林,张宏臻,Wang Changqing,Y.T.Chow,Wang Pu,Judith Dawes.Nd∶GdVO4晶体生长及其1064nm的激光特性[J].人工晶体学报,1999(03):229-232. |
[4] | Zhang HJ.;Zhu L.;Zhang HZ.;Wang P.;Dawes J.;Wang CQ.;Chow YT.;Meng XL. .Investigations on the growth and laser properties of Nd : GdVO4 single crystal[J].Crystal Research and Technology: Journal of Experimental and Industrial Crystallography,1998(5):801-806. |
[5] | 陈建勤;陈敏熊;赵敬世.晶体缺陷[M].杭州:浙江大学出版社,1992:69-72. |
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