以氧化锡(SnO2),五氧化二铌(Nb2O5)和三氧化二锑(Sb2O3)粉末为原料,通过无压固相烧结技术制备了SnO2基导电陶瓷,研究了Nb2O5单掺杂及Nb2O5-Sb2O3双掺杂SnO2基陶瓷的电导率和热膨胀性.采用X射线衍射仪对试样物相结构进行了表征.研究发现,当Nb2O5掺杂量为14%(摩尔分数,下同)时,SnO2基陶瓷800℃的电导率迭10.51S/cm;在此基础上,当Sb2O3添加量为2%时,500℃的电导率达1.61S/cm.SnO2-Nb2O5基陶瓷的热膨胀系数随Nb2O5掺杂量的增加而降低,Sb2O3的添加使SnO2基陶瓷的热膨胀系数增大.X射线衍射仪分析结果表明,Nb2O5能均匀分布在SnO2粉末中,形成稳定的固溶体;Sb2O3的添加不利于Nb2O5形成稳定的固溶体.
参考文献
| [1] | 马小玲,冯小明.导电陶瓷的研究进展[J].佛山陶瓷,2009(06):43-46. |
| [2] | Varela J A;Cerri J A;Leite E R et al.Microstructural evolution during sintering of CoO doped SnO2 ceramics[J].Ceramics International,1999,25(03):253. |
| [3] | Jér(o)me L;Rolande O F;Philippe B .Sintering behaviour of CuO-doped SnO2[J].Journal of the European Ceramic Society,2000,20(14-15):2415. |
| [4] | M. A. L. Margionte;A. Z. Simoes;C. S. Riccardi .WO_3 and ZnO-doped SnO_2 ceramics as insulating material[J].CERAMICS INTERNATIONAL,2006(6):713-718. |
| [5] | Filho F M;Sim(o)es A Z;Ries A et al.Investigation of electrical properties of tantalum doped SnO2 varistor system[J].Ceramics International,2005,31(03):399. |
| [6] | Sekhar C R;Malay K K;Dhruba D .Preparation and study of doped and undoped tin dioxide films by the open air chemical vapour deposition technique[J].Thin Solid Films,1997,307(1-2):221. |
| [7] | Han SD.;Wang L.;Kim JW.;Yang H. .Preparation and properties of vanadium-doped SnO2 nanocrystallites[J].Sensors and Actuators, B. Chemical,2000(1/3):112-115. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%