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以α-六噻吩(α-sexithiophene,α-6T)为有源层,二氧化硅(SiO2)为绝缘层,钛/金(Ti/Au)为电极,分别制备了沟道宽长比为40、160和640的有机薄膜晶体管(Organic thin-film transistors,OTFT)器件.讨论了OTFT器件的宽长比对二氧化氮气敏性能的影响.结果表明,基于α-6T的OTFT器件对二氧化氮气体具有较高的实时响应;OTFT器件对二氧化氮气体的气敏性能与沟道宽长比有依赖关系,随着沟道宽长比的增大,器件的响应灵敏度提高、响应时间延长,宽长比为160的器件气敏性能最佳.

参考文献

[1] Drury CJ.;Hart CM.;Matters M.;de Leeuw DM.;Mutsaers CMJ. .Low-cost all-polymer integrated circuits[J].Applied physics letters,1998(1):108-110.
[2] Hagen Klauk;David J. Gundlach;Jonathan A. Nichols;Thomas N. Jackson .Pentacene organic thin-film transistors for circuit and display applications[J].IEEE Transactions on Electron Devices,1999(6):1258-1263.
[3] Crone B;Dodabalapur A;Lin Y et al.Large-scale complementary integrated circuits based on organic transistors[J].Nature(London),2000,403(6769):521.
[4] Tsumura H K;Ando T .Macromolecular electronic device:Field-effect transistor with a polythiophene thin film[J].Applied Physics Letters,1986,49(18):10.
[5] Schon J H;Kloc Ch;Dodabalapur A et al.A light-emitting field-effect transistor[J].Science,2000,290(5493):599.
[6] Schon JH;Dodabalapur A;Bao Z;Kloc C;Schenker O;Batlogg B .Gate-induced superconductivity in a solution-processed organic polymerfilm[J].Nature,2001(6825):189-192.
[7] B. Crone;A. Dodabalapur;A. Gelperin;L. Torsi;H. E. Katz;A. J. Lovinger;Z. Bao .Electronic sensing of vapors with organic transistors[J].Applied physics letters,2001(15):2229-2231.
[8] Mabeck JT;Malliaras GG .Chemical and biological sensors based on organic thin-film transistors[J].Analytical and bioanalytical chemistry,2006(2):343-353.
[9] Laurs H;Heiland G .Electrical and optical properties of phthalocyanine films[J].Thin Solid Films,1987,149(02):129.
[10] Assadi A;Gustafsson G;Willander M et al.Determination of field-effect mobility of poly (3-hexylthiophene) upon exposure to NH3 gas[J].Synthetic Metals,1990,37(1-3):123.
[11] Ohmori Y;Takahashi H;Muro K et al.Fabrication and characteristics of Schottky gated poly (3-alkylthiophene)field effect transistors[J].Journal of Applied Physics,1991,30(4A):L1247.
[12] FUKUDA Hisashi;ISE Masahumi;KOGURE Toshimitsu;TAKANO Nobuhiro .Gas sensors based on poly-3-hexylthiophene thin-film transistors[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2004(10):441-444.
[13] Jeongwon Park;James E. Royer;Corneliu N. Colesniuc;Forest I. Bohrer;Amos Sharoni;Sungho Jin;Ivan K. Schuller;William C. Trogler;Andrew C. Kummel .Ambient induced degradation and chemically activated recovery in copper phthalocyanine thin film transistors[J].Journal of Applied Physics,2009(3):034505-1-034505-8.
[14] W. Wondmagegn;R. Pieper .Simulation of top-contact pentacene thin film transistor[J].Journal of computational electronics,2009(1):25-28.
[15] Liao F;Chen C;Subramanian V .Organic TFTs as gas sensors for electronic nose applications[J].Sensors and Actuators, B. Chemical,2005(2):849-855.
[16] Halik M et al.Relationship between molecular structures and electrical performance of oligothiophene organic thin film transistors[J].Advanced Materials,2003,15(11):917.
[17] Gilles Horowitz;Mohsen E. Hajlaoui;Riadh Hajlaoui .Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors[J].Journal of Applied Physics,2000(9):4456-4463.
[18] Horowitz G;Fichou D;Peng X et al.A field-effect transistor based on conjugated alpha-sexithienyl[J].Solid State Communications,1989,72(04):381.
[19] Hu W;Liu Y;Liu S et al.The gas sensitivity of a metalinsulator-semiconductor field-effect-transistor based on Langmuir-Blodgett films of a new asymmetrically substituted phthalocyanine[J].Thin Solid Films,2000,360(01):256.
[20] M. Bouvet;A. Leroy;J. Simon;F. Tournilhac;G. Guillaud;P. Lessnick;A. Maillard;S. Spirkovitch;M. Debliquy;A. de Haan;A. Decroly .Detection and titration of ozone using metallophthalocyanine based field effect transistors[J].Sensors and Actuators, B. Chemical,2001(1):86-93.
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