氧化锌是一种宽禁带半导体,在太阳能、光电显示等方面有广泛的应用.制约其应用的是p型氧化锌很难得到,其中一个原因在于本征氧化锌n型导电的原因不明确.本文综述了氧化锌n型导电的机理,重点分析了本征缺陷和非故意掺杂氢对氧化锌n型导电的影响.
参考文献
[1] | Klingshirn C .ZnO: From basics towards applications[J].Physica status solidi, B. Basic research,2007(9):3027-3073. |
[2] | Selim FA;Weber MH;Solodovnikov D;Lynn KG .Nature of native defects in ZnO[J].Physical review letters,2007(8):5502-1-5502-4-0. |
[3] | Anderson Janotti;Chris G. Van de Walle .Native point defects in ZnO[J].Physical review, B. Condensed matter and materials physics,2007(16):165202.1-165202.22. |
[4] | Kim, D.-H.;Lee, G.-W.;Kim, Y.-C. .Interaction of zinc interstitial with oxygen vacancy in zinc oxide: An origin of n-type doping[J].Solid State Communications,2012(18):1711-1714. |
[5] | Jokela SJ;McCluskey MD .Structure and stability of O-H donors in ZnO from high-pressure and infrared spectroscopy[J].Physical review, B. Condensed matter and materials physics,2005(11):3201-1-3201-4-0. |
[6] | McCluskey, M.D.;Tarun, M.C.;Teklemichael, S.T. .Hydrogen in oxide semiconductors[J].Journal of Materials Research,2012(17):2190-2198. |
[7] | Rajkrishna Dutta;Nibir Mandal .Mg doping in wurtzite ZnO coupled with native point defects: A mechanism for enhanced n-type conductivity and photoluminescence[J].Applied physics letters,2012(4):042106-1-042106-4. |
[8] | 万齐欣,熊志华,李冬梅,刘国栋,甘丽新.本征缺陷对Ag掺杂ZnO的影响[J].人工晶体学报,2009(05):1202-1206. |
[9] | F.H. Wang;H.P. Chang;J.C. Chao .Improved properties of Ti-doped ZnO thin films by hydrogen plasma treatment[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2011(15):5178-5182. |
[10] | Matsubara, M.;Amini, M.N.;Saniz, R.;Lamoen, D.;Partoens, B. .Attracting shallow donors: Hydrogen passivation in (Al,Ga,In)-doped ZnO[J].Physical review, B. Condensed matter and materials physics,2012(16):165207-1-165207-4. |
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