本文搭建了一套大气压等离子体薄膜沉积系统,其装置采用喷枪方式,结合运动机构控制喷枪按特定轨迹移动镀膜。四乙氧基硅烷（TEOS）作为硅的先驱体,氮气为先驱体载气和等离子体放电气体,基底温度50℃～300℃,进行了大气压等离子体化学气相沉积氧化硅薄膜的研究。运用红外光谱（FTIR）、光学椭偏仪,扫描电镜（SEM）和纳米压痕仪对沉积的薄膜进行了表征。研究表明,薄膜中富含Si—O—Si键且有少量S—OH键;较高基底温度有利于在硅基底上得到一层平整致密的薄膜;基底温度300℃时薄膜硬度达到4.8GPa,略低于采用PECVD方法沉积的氧化硅薄膜。
A non-equilibrium atmospheric-pressure plasma jet was developed.A kinetic controlling system was integrated to control the movement of plasma jet,which was used to deposit silicon oxide films.TEOS was used as the precursor.N2 gas was used to generate plasma and carry precursor.Substrate temperature was varied from 50℃ to 300℃.As-deposited films were characterized by ellipsometrry,Fourier transform infrared（FTIR） spectroscopy,scanning electron microscopy（SEM） and nano-indentometry.FTIR spectra indicate that there are a majority of Si-O-Si bonds and a minority of Si-OH bonds in the as-deposited films.Higher substrate temperature is contributive to depositing flat and compact films.Under substrate temperature 300℃,film hardness is up to 4.8GPa,which is slightly less than that of films deposited by plasma enhanced chemical vapor deposition（PECVD）.
参考文献
| [1] | 张铁群,战元龄.光学薄膜、光电子薄膜及光学有机薄膜[J].光机电信息,2002(07):29-32. |
| [2] | 袁一方,陈桂莲,陈抱雪,周鹏飞,李平,朱琦莹.光学薄膜技术在光通信技术中的应用[J].光学仪器,2001(05):110-113. |
| [3] | Lange B J;Wyser Y .Recent innovations in harrier technologies for plastic packaging-a review[J].Packaging Technology and Science,2003,16:149-158. |
| [4] | Giustino F;Umari P;Pasquarello A .Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides[J].Microelectronic Engineering,2004,72:299-303. |
| [5] | 王永珍,龚国权,崔敬忠.二氧化硅薄膜的制备及应用[J].真空与低温,2003(04):228-233. |
| [6] | Zhang J M;Dattatray S W;Ellen R F .Mechanisms of SiO2 films deposition from t ctramethylcyclotetrasiloxane, dimethyldimethoxysilane, and trimethylsilane plasmas[J].Journal of Vacuum Science and Technology A:Vacuum Surfaces and Films,2004,22(01):201-214. |
| [7] | Granier A;Nicolazo F;Vallee C .Diagnostics in O2 helicon plasmas for SiO2 deposition[J].Plasma Sources Science and Technology,1997,6:147-156. |
| [8] | Johann Laimer;Herbert Stoeri .Recent Advances in the Research on Non-Equilibrium Atmospheric Pressure Plasma Jets[J].Plasma processes and polymers,2007(3):266-274. |
| [9] | Mounir Laroussi;Tamer Akan .Arc-Free Atmospheric Pressure Cold Plasma Jets: A Review[J].Plasma processes and polymers,2007(9):777-788. |
| [10] | Sawada Y.;Kogoma M.;Ogawa S. .SYNTHESIS OF PLASMA-POLYMERIZED TETRAETHOXYSILANE AND HEXAMETHYLDISILOXANE FILMS PREPARED BY ATMOSPHERIC PRESSURE GLOW DISCHARGE[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,1995(8):1661-1669. |
| [11] | 程诚,方鹏,朱晓东,耿松,詹如娟.大气压等离子体制备类二氧化硅薄膜的实验研究[J].真空科学与技术学报,2005(04):293-296. |
| [12] | Chen Q;Zhang YF;Han EL;Ge YJ .SiO2-like film deposition by dielectric barrier discharge plasma gun at ambient temperature under an atmospheric pressure[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,2006(6):2082-2086. |
| [13] | Babayan S E;Jeong J Y;Schiitze et al.Deposition of silicon dioxide films with a non-equilibrium atmospheric-pressure plasma jet[J].Plasma Sources Science and Technology,2001,10:573-578. |
| [14] | Inomata K;Ha H;Chaudhary K A;Hideomi Koinuma .Open air deposition of SiO2 film from a cold plasma torch of tetramethoxysilane-H2-Ar system[J].Applied Physics Letters,1994,64(01):46-48. |
| [15] | Patrick W J;Schwartz G C;Chapple-Sokol J D et al.PlasmaEnhanced Chemical Vapor Deposition of Silicon Dioxide Films Using Tetraethoxysilane and Oxygen: Characterization and Properties of Films[J].Journal of the Electrochemical Society,1992,139(09):2604-2613. |
| [16] | Chou J S;Lee S C .Effect of porosity on infrared absorption spectra of silicon dioxide[J].Journal of Applied Physics,1995,77(04):1805-1808. |
| [17] | Montero I;Gal'an L;Najmi O;Albella J M .Montero.Disorder-induced vibration-mode coupling in SiO2 films observed under normal-incidence infrared radiation[J].Physical Review B,1994,50(07):4881-4884. |
| [18] | 张海霞,张泰华,郇勇.纳米压痕和划痕法测定氧化硅薄膜材料的力学特性[J].微纳电子技术,2003(07):245-248. |
| [19] | K. T. Min .Deposition kinetics of silicon dioxide from tetraethylorthosilieate[J].Thin Solid Films,2000,360:60-68. |
| [20] | O. Kunio;M. Naohiro .Dissociation processes in plasma enhanced chemical vapor deposition of SiO2 flms using tetraethoxysilane[J].Journal of Vacuum Science and Technology A:Vacuum Surfaces and Films,1998,16(06):3457-3163. |
| [21] | Borra J P .Nucleation and aerosol processing in atmospheric pressure electrical discharge: powders production, coating and filtration[J].Journal of Physics D:Applied Physics,2006,39:R19-R54. |
| [22] | Jidenko N;Jimenez C;Massines F;Borra JP .Nano-particle size-dependent charging and electro-deposition in dielectric barrier discharges at atmospheric pressure for thin SiOx film deposition[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2007(14):4155-4163. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%