用磁控反应溅射方法制备ITO膜时,溅射速率不断变化,并且等离子体也发出较强的具有较宽光谱的光.报导了用调整特征光谱强度来控制溅射速率的新方法,并用以控制ITO膜的沉积过程
In the ITO films deposition by reactive magnetron sputtering, the deposition rate of ITO film will change with the carrying out of sputtering. We provide a new method to monitor the sputtering viel by detecting the characteristic light intensity of plasma
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