测试了高纯电子铝箔(以下简称铝箔)在2 mol/L HCl和2 mol /L HCl+05 mol/L H2SO4溶液中三角波动电位激励时的电流响应曲线，用Daubechies2 小波对所测得的电流响应曲线进行了时频分解，研究了SO2-4在铝箔交流扩面电蚀 工程中的缓蚀机理.提出了铝箔在含Cl-溶液中点蚀的氧空位侵蚀机理模型，该模型指出 在一定的酸度条件下，在侵蚀膜表面形成的正电荷集中点是Cl-与SO2-4发生特性 吸附的原因；Cl-在侵蚀膜内的主要传输途径是存在于侵蚀膜内微晶晶界上的氧空位链； 进入侵蚀膜内的SO2-4在强场作用下发生离解，离解出的O2-与侵蚀膜内的氧 空位作用，致使氧空位湮灭，切断了Cl-在侵蚀膜内的传输途径，同时由于这种作用调整 了Cl-在侵蚀膜内传输的网络结构，增加了新蚀孔的萌生机率，从而在铝箔电蚀扩面腐蚀 工程中起到了独特的缓蚀作用.
Pitting corrosion behavior of high purity Al-foil i n 2 mol/L HCl and 2 mol/L HCl+0.5 mol/L H2SO4 solution was investigated by c yclic triangular wave potentiodynamic method.The current signals were analyzed b y Daubechies2 wavelet transform yielded time-frequency information.The inhibitio n mechanism of SO2-4 in AC etching of high purity Al-foil was discussed. A new model of oxygen vacancy mechanism for high purity aluminum pitting corrosi on indicated that if the pH of the solution is less than the isoelectronic point ,the oxide film on aluminum will acquire positive charges,this positive charges point takes into account adsorption of Cl- and SO2-4.Cl- transport t hrough the oxide film by means of oxygen vacancies.O2- dissociate from SO 2-4 under the function of local electric field captured the oxygen vacan cy,decreased the concentration of oxygen vacancies,modified the transport networ k of Cl- in the oxide film.As the result,the probability of new pit initiation increased,this is high performance of inhibition of SO2-4 acted in AC e tching of Al-foil.
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