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用熔体Modified Brdgman法生长出尺寸直径40 mm长度80 mm的弛豫铁电单晶PMNT90/10,表明该方法不仅适合在准同型相界(MPB)附近生长PMNT单晶,也适合生长PT含量很低的PMNT单晶.在生长出的PMNT90/10晶体中,铁电相与顺电相两相共存,并呈现亚微畴结构特征.随着晶体组分由PMN组元变化到MPB组分附近,PMNT的电畴结构呈现微畴-亚微畴-不规则宏畴-规则宏畴演化系列,而介电弛豫特性则逐步弱化.PMNT固熔体的电学性能依赖于晶体组分,(001)切型PMNT90/10晶体的压电常数d33约80 pC/N,显著低于MPB附近组分,但其介电常数ε达到12600,明显高于后者.

参考文献

[1] R E. Service, Science, 275, 1878(1997)
[2] H.Fu, R.E.Cohen, Nature, 403, 281(2000)
[3] S.E.Park, T.R.Shrout, J. Appl. Phys., 82(4), 1804(1997)
[4] T.Kobayashi, S.Shimanuki, S.Saitoh, Y.Yamashita, Jpn. J. Appl. Phys., 36, 272(1997)
[5] W.Chen, Z.G.Ye, J. Cryst. Growth, 233, 503(2001)
[6] Y.Hosono, K.Harada, T.Kobayashi, K.Itsumi, M.Izumi, Y.Yamashita, N.Ichinose, Jpn. J. Appl. Phys., 41,7084(2002)
[7] T.Li, A.M.Scotch, H.M.Chan, M.P. Harmer, J. Amer. Ceram. Soc., 81(1), 244(1998)
[8] XU Guisheng, LUO Haosu, WANG Pingchu, XU Haiqing, YIN Zhiwen, Chinese Science Bulletin, 44(20),2157(1999)(许桂生,罗豪甦,王评初,徐海清,殷之文,科学通报,44(20),2157(1999))
[9] S.G.Lee, R.G.Monteiro, R.S.Feigelson, H.S.Lee, M.Lee, S.E. Park, Appl. Phys. Lett., 74, 1030(1999)
[10] SUN Shiwen, PAN Xiaoming, LI Donglin, LI Hongjun, ZHU Lihui, HUANG Qingwei, WANG Pingchu,Journal of Inorganic Materials, 19(3), 541(2004)(孙士文,潘晓明,李东林,李洪钧,朱丽慧,黄清伟,王评初,无机材料学报,19(3),541(2004))
[11] S.W.Sun, X.M. Pan, P.C.Wang, L.H.Zhu, Q.W.Huang, D.L.Li, Z.W.Yin, Appl. Phys. Lett., 84(4),574(2004)
[12] ZHAO Lili, ZHAO Ming, ZHANG Changsong, FAN Huiqing, TIAN Changsheng, Functional Materials,35(3), 333(2004)(赵丽丽,赵鸣,张昌松,樊慧庆,田长生,功能材料,35(3),333(2004))
[13] S.J.Zhang, S.Rhee, C.A.Randall, T.R.Shrout, Jpn. J. Appl. Phys., 41, 722(2002)
[14] N.Yasuda, N.Mori, H.Ohwa, Y.Hosono, Y.Yamashita, M.Iwata, M.Maeda, I.Suzuki, Y.Ishibashi, Jpn. J.Appl. Phys., 41, 7007(2002)
[15] E.F.Alberta, A.S.Bhalla, Materials Letters, 35, 199(1998)
[16] XU Guisheng, LUO Haosu, WANG Pingchu, QI Zhenyi, YIN Zhiwen, Chinese Science Bulletin, 45(7),700(2000)(许桂生,罗豪甦,王评初,齐振一,殷之文,科学通报,45(7),700(2000))
[17] G.S.Xu, H.S.Luo, Y.P. Guo, Y.Q.Gao, H.Q.Xu, Z.Y.Qi, W.Z.Zhong, Z.W.Yin, Solid State Communications,120, 321(2001)
[18] X.Jiang, F.Tang, J.T.Wang, T.P. Chen, Physica C, 364-365, 678(2001)
[19] Z.G.Ye, H.Schmid, Ferroelectrics, 145, 83(1993)
[20] G.S.Xu, H.S.Luo, H.Q. Xu, Z.W.Yin, Phys. Rev. B, 64, 020102(2001)
[21] B.Noheda, D.E.Cox, G.Shirane, J.Gao, Z.G.Ye, Phys. Rev. B, 66, 054104(2002)
[22] L.E.Cross, Ferroelectrics, 76, 241(1987)
[23] Z.G.Ye, Ferroelectrics, 184, 193(1996)
[24] XU Guisheng, LUO Haosu, XU Haiqing, QI Zhenyi, YIN Zhiwen, Journal of Inorganic Materials, 15(2),221(2000)(许桂生,罗豪甦,徐海清,齐振一,殷之文,无机材料学报,15(2),221(2000))
[25] LI Donglin, WANG Pingchu, LUO Haosu, PAN Xiaoming, ZHANG Shen, YIN Zhiwen, Chinese Journal of Materials Research, 14(5), 457(2000)(李东林,王评初,罗豪甦,潘晓明,张申,殷之文,材料研究学报,14(5),457(2000))
[26] M.C.Shin, S.J.Chung, S.G.Lee, R.S.Feigelson, J. Cryst. Growth, 263(1-4), 412(2004)
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