以联苯四酸二酐（BPDA）和4,4’-二氨基二苯醚（ODA）为单体原料,利用溶液缩聚法制备聚酰亚胺（PI）绝缘膜,采用XRD、SEM、FT-IR对不同热亚胺化温度合成的PI薄膜结构和表面形貌进行了表征,利用超高阻微电流测试仪测试了热亚胺化温度和粉体含量对PI绝缘膜击穿场强的影响。结果表明,在真空度为1.0×10-2Pa条件下,300℃热亚胺化1h,聚酰亚胺酸（PAA）薄膜完全被热亚胺化,制备的PI绝缘膜内部结构致密;当BPDA和ODA的粉体含量为5%时,PI绝缘膜击穿场强高达2.15MV/cm,表明PI薄膜具有良好的电学性能。
Biphenyltetracarboxylic dianhydride(BPDA) and 4,4'-diaminodiphenyl ether(ODA) used as monomer reaction products and the polyimide(PI) dielectric films have been successfully fabricated via solution polycondensation.The structure and surface morphology of PI dielectric films prepared in different imidization temperature were characterized by XRD,SEM and FT-IR.The influence that the imidization temperature and powder content(BPDA and ODA) affected on the breakdown field was measured by current testing instrument with high resistance techniques.The experimental results show that polyimide acids(PAA) were completely aminated and become PI dielectric films with compact internal structure after imidization temperature of 300℃ for 1h under vacuum environment of 1.0×10-2Pa.The breakdown field can reach up to 2.15MV/cm when powder content of BPDA and ODA was fixed to 5%,which indicates that PI dielectric films have good electrical properties.
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