沉积在ZrN,TaN阻挡层上的Cu膜分别在真空和氢气、氮气的混合气氛下退火.利用SEM、XRD和电阻率来表征多层膜的热稳定性.实验结果表明:对于沉积在同种阻挡层上的多层膜在混合气氛中退火的热稳定性较真空退火的要高.对真空退火处理,沉积在ZrN阻挡层上的多层膜的热稳定性比沉积在TaN阻挡层上的要高.研究结果表明:多层膜的热稳定性的评价不仅跟多层膜本身的因素有关,如阻挡层的种类,还和退火气氛有关.
参考文献
[1] | Chiou JC.;Chen MC.;Juang KC. .THE PROCESSING WINDOWS FOR SELECTIVE COPPER CHEMICAL VAPOR DEPOSITION FROM CU(HEXAFLUOROACETYLACETONATE)TRIMETHYLVINYLSILANE[J].Journal of the Electrochemical Society,1995(1):177-182. |
[2] | Murarka S P .[J].Materials Science and Engineering R:Reports,1997,19:87. |
[3] | Torres J. .ADVANCED COPPER INTERCONNECTIONS FOR SILICON CMOS TECHNOLOGIES[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1995(1/4):112-123. |
[4] | Brioniatowski A .[J].Physical Review Letters,1989,62:3074. |
[5] | Nicolet M A .[J].Thin Solid Films,1978,52:415. |
[6] | Kwak M Y;Shin D H;Kang T W;Kim K N .[J].Thin Solid Films,1999,339:290. |
[7] | Chen G S;Chen S T .[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,2000,18:720. |
[8] | Takeyana M B;Noya A;Sakanishi K .[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,2000,18:1333. |
[9] | Thouless M D;Gupta J.[J].Journal of Materials Research,1993(08):1845. |
[10] | Mullins W W .[J].Acta Materialia,1958,6:414. |
[11] | Apblett C A;Ficalora P J .[J].Materials Research Society Symposium Proceedings,1992,239:99. |
[12] | Laurila T;Zeng K;Kivilahti J K;Molrius J .[J].Journal of Materials Research,2001,16:2939. |
[13] | Chang CA .[J].Journal of the Electrochemical Society,1980,127:1331. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%