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以聚碳硅烷(PCS)包覆B4C粉为原料,分别在300℃、50 MPa下温压成型和800MPa下冷等静压成型,而后将压坯置于氩气气氛保护下在1 200℃保温2 h,再在1 800~2 000℃下真空烧结3 h,原位反应制备出SiC/B4C复相陶瓷;研究了它的相对密度、物相组成和显微结构。结果表明:温压工艺比冷等静压工艺能得到更高密度的复相陶瓷;合15%SoC的温压压坯在烧结3 h后得到复相陶瓷的相对密度大于93%;复相陶瓷由B4C和SiC相组成,SiC相均匀分布在B4C颗粒界面上。

参考文献

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