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为考察具有Cu7In3相结构的CuIn前驱膜对CuInS2薄膜微结构的影响,采用电沉积法制备了CuIn薄膜,并对制备态CuIn薄膜在380 ℃进行真空退火处理制备Cu7In3前驱膜。采用硫化法对制备态CuIn薄膜和Cu7In3薄膜进行硫化处理制备了CIS薄膜。结果表明,两种前驱膜经硫化处理均在表面生成CuxS偏析相,经KCN刻蚀处理发现以Cu7In3为前驱膜制备的CuInS2薄膜高质量结晶,具有(112)择优取向,适合于制备CIS薄膜太阳能电池吸收层。

The influence of CuIn precursors with Cu7In3 phase structure on the microstructure of CuInS2 films was investigated.CuIn precursors were synthesized via electrodepositing techniques. Cu7In3 films were prepared via annealing asdeposited CuIn films in vacuum at 380℃. CuInS2 films were prepared by sulphurization of two types of CuIn precursors. The results showed that there was a CuxS secondary phase segregated on surface of the asgrown films. The CIS films with (112) preferred orientation were synthesized from CuIn precursors containing the Cu7In3 phase. The CuIn precursor with Cu7In3 phase is favorable for CuInS2 absorbers in solar cells.

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