为考察具有Cu7In3相结构的CuIn前驱膜对CuInS2薄膜微结构的影响,采用电沉积法制备了CuIn薄膜,并对制备态CuIn薄膜在380 ℃进行真空退火处理制备Cu7In3前驱膜。采用硫化法对制备态CuIn薄膜和Cu7In3薄膜进行硫化处理制备了CIS薄膜。结果表明,两种前驱膜经硫化处理均在表面生成CuxS偏析相,经KCN刻蚀处理发现以Cu7In3为前驱膜制备的CuInS2薄膜高质量结晶,具有(112)择优取向,适合于制备CIS薄膜太阳能电池吸收层。
The influence of CuIn precursors with Cu7In3 phase structure on the microstructure of CuInS2 films was investigated.CuIn precursors were synthesized via electrodepositing techniques. Cu7In3 films were prepared via annealing asdeposited CuIn films in vacuum at 380℃. CuInS2 films were prepared by sulphurization of two types of CuIn precursors. The results showed that there was a CuxS secondary phase segregated on surface of the asgrown films. The CIS films with (112) preferred orientation were synthesized from CuIn precursors containing the Cu7In3 phase. The CuIn precursor with Cu7In3 phase is favorable for CuInS2 absorbers in solar cells.
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