高质量半绝缘Φ150mm 4H-SiC单晶生长研究

人工晶体学报, 2016, 45(5): 1145-1152.

高质量半绝缘Φ150mm 4H-SiC单晶生长研究

彭燕 ^1, , 陈秀芳 ^2, , 彭娟 ^3, , 胡小波 ^4, , 徐现刚 ^5,

1.山东大学晶体材料国家重点实验室,济南 250100;全球能源互联网(山东)协同创新中心,济南 250061

2.山东大学晶体材料国家重点实验室,济南 250100;全球能源互联网(山东)协同创新中心,济南 250061

3.中国矿业大学,徐州,221116

4.山东大学晶体材料国家重点实验室,济南 250100;全球能源互联网(山东)协同创新中心,济南 250061

5.山东大学晶体材料国家重点实验室,济南 250100;全球能源互联网(山东)协同创新中心,济南 250061

基金项目: 国家自然科学基金(61504075,61327808,11404393) 山东省自主创新及成果转化专项(2014ZZCX04215)

关键词： Φ150 mm 4H-SiC , 数值模拟 , PVT法

Study on the Growth of High Quality Semi-Insulating Φ150 mm 4H-SiC Single Crystal

Keywords： Φ150 mm 4H-SiC , numerical simulation , PVT method

采用数值模拟研究PVT法Φ150 mm 4H-SiC单晶生长的功率、频率选择、坩埚位置及保温厚度等关键生长参数.研究表明Φ150 mm 4H-SiC单晶生长功率是2inch 4H-SiC生长功率的2倍,优化的加热频率在5 kHz以下,系统分析不同生长参数下生长腔内径向及轴向温度梯度的变化规律.在此基础上初步的进行了Φ150 mm 4H-SiC单晶的生长工作,获得了无裂纹、直径完整的高质量SiC衬底材料.拉曼光谱Mapping测量显示Φ150 mm SiC衬底全片无多型,均为4H-SiC晶型.X光摇摆曲线显示半宽小于30 arcsec.采用掺杂过渡金属V杂质,获得了电阻率超过5×109 Ω·cm的150mmSiC衬底.

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