利用Zn/ZnO复合靶材,通过射频磁控溅射技术,在衬底温度为150℃时分别在Ar+O2和Ar+H2的混合气氛中制备ZnO薄膜,通过干涉显微镜、XRD、Hall效应测试仪、紫外-可见分光光度计研究了O2和H2流量对薄膜结构及透明导电性能的影响.结果发现,薄膜厚度随O2流量增加而明显增加而随H2流量增加呈下降趋势.只有通入合适流量的O2或H2,薄膜才能保持(002)择优取向、较高的结晶度以及较小的压应力,同时在薄膜中形成高浓度Vo和/或Hi等缺陷,因此有效降低ZnO薄膜的电阻率,并保持高的透光率,从而改善ZnO薄膜透明导电性能.当前研究中,当O2和H2流量分别为0.4 sccm和2.0 sccm时,得到的最低电阻率分别为6.33×10-3和2.51×10-3Ω·cm,平均透光率均大约为81.5％,相应的最高品质因子分别为1.04×10-3和1.29×10-3 Ω-1.
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