采用射频等离子增强化学气相沉积(RF-PECVD)方法,以氢稀释的硅烷(SiH4)为反应气体,磷烷(PH3)为掺杂气体,制备了n型氢化非品硅(a-Si:H)薄膜.研究了辉光放电功率对薄膜微结构和光电性能的影响,采用XRD和拉曼散射光谱对薄膜的微结构进行了表征,薄膜的折射率通过NKD-7000 W光学薄膜系统拟合,薄膜暗电导率利用高阻仪测试.结果表明:在辉光功率30～150 W范国内,所沉积的磷掺杂的硅薄膜为非晶态;非晶态薄膜结构中程有序度随辉光功率的增大先增人后减小,在功牢为100 W时非晶硅薄膜中程有序程度最高;薄膜的折射率随着辉光功率的增大先增加后减小,在功率为70 W达到最大值3.7;薄膜暗电导率在100 W最大,其最人值为9.32×10-3S/ cm.
参考文献
| [1] | Shan H A;Schade V;Vanecek M et al.Thin-film Silicon Solar Cell Technology[J].Progress in Photovoltaics:Research and Applications,2004,12(2-3):113442. |
| [2] | 张德贤,薛颖,蔡宏琨,陶科,姜元建,赵敬芳,王林申,隋妍萍.柔性衬底非晶硅薄膜太阳电池量子效率的研究[J].人工晶体学报,2009(02):407-410,415. |
| [3] | K. L. Chopra;P. D. Paulson;V. Dutta .Thin-Film Solar Cells: An Overview[J].Progress in photovoltaics,2004(2/3):69-92. |
| [4] | Kenji Yamamoto;Akihiko Nakajima;Masashi Yoshimi .A Thin-film Silicon Solar Cell and Module[J].Progress in photovoltaics,2005(6):489-494. |
| [5] | Kwak J;Kwon SW;Il Park S;Yang JH;Lim KS .Microcrystalline silicon solar cell using p-a-Si : H window layer deposited by photo-CVD method[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2008(9):1081-1085. |
| [6] | 周丽华,刘成,叶晓军,钱子勍,陈鸣波.隧穿结对柔性衬底非晶硅/微晶硅叠层太阳电池特性的影响[J].人工晶体学报,2010(05):1136-1140. |
| [7] | 刘恩科;朱秉升.半导体物理学[M].北京:国防工业出版社,1979:53. |
| [8] | 熊绍珍;朱美芳.太阳能电池基础与应用[M].北京:科学出版社,2009:75-85. |
| [9] | 陈宇翔,李伟,金鑫,蒋亚东,廖乃镘,蔡海洪,李志,龚宇光.气体压强对磷掺杂a-Si：H薄膜电学性能的影响[J].半导体光电,2009(04):550-554. |
| [10] | Mile I;Ozren G;Wolfgang K .Mechanism of Raman Seattering in Amorphous Silicon[J].Journal of Molecular Strueture,1999,480-481:651-655. |
| [11] | Lee K;Shur M;Fjeldly T A.Semiconductor Device Modelling for VLSI[M].Englewoed Cliffs:Prentice Hall,1993 |
| [12] | Wang H F .Doping and Field Enhancod Crystallization of Amorphous Silicon Thin Film by PECVD[D].Wahan:Wuhan University of Technology,2009. |
| [13] | 王慧芳 .PECVD法沉积掺杂非品硅薄膜及其场致诱导晶化研究[D].武汉理工大学学报,2009. |
| [14] | Filonovich, SA;Aguas, H;Bernacka-Wojcik, I;Gaspar, C;Vilarigues, M;Silva, LB;Fortunato, E;Martins, R .Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2009(10):1253-1256. |
| [15] | 陈红 .氢化纳米硅薄膜的光学常数和室温可见发光研究[D].上海交通大学,2007. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%