采用直流反应磁控溅射法制备了厚度为500nm的氧化钒薄膜.采用X射线光电子能谱仪对制得的氧化钒薄膜进行了深度刻蚀分析.结果表明,随薄膜刻蚀深度的增加,薄膜内的氧钒比及钒离子价态发生了递变,当薄膜刻蚀深度小于80nm时,这一递变趋势尤为明显.认为这与氧化钒薄膜中各价态钒氧化合物的稳定性和薄膜的制备工艺密切相关.
Vanadium oxide thin film with the thickness of 500nm is prepared. Deep-scan analysis of composition and valence of the film is made. The deep-scan analysis reveal that with scan depth increasing, the O/V ratio and the vanadium valence of the film changes gradiently, especially within scan depth of 80nm. It is believed that the phenomena above are correlated with the stability of the vanadium oxides and the preparing technology.
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