抑制GaN基LED发光效率衰减的研究进展

材料导报, 2012, 26(21): 25-29.

抑制GaN基LED发光效率衰减的研究进展

曾梦麟 ^1, , 周佐华 ^2, , 陈康 ^3, , 刘为刚 ^4, , 徐迪 ^5, , 余小明 ^6,

1.湖南大学微纳光电器件及应用教育部重点实验室,长沙410082

2.湘能华磊光电股份有限公司,郴州423038

3.湘能华磊光电股份有限公司,郴州423038

4.湘能华磊光电股份有限公司,郴州423038

5.湘能华磊光电股份有限公司,郴州423038

6.湘能华磊光电股份有限公司,郴州423038

基金项目: 国家自然科学基金(10874042)

关键词： LED , GaN , 发光效率 , 效率衰减

Improvement of Efficiency Droop in GaN-based Light-emitting Diodes

目前蓝宝石衬底氮化镓基发光二极管取得了显著发展,但在通用照明领域中,GaN基LED仍然需要更高的发光效率和光输出功率.提高发光亮度和抑制大电流注入发光效率衰减是当前GaN基LED领域的研究重点.从GaN基LED外延层内部结构即电子发射层、发光复合区量子阱、电子阻挡层方面介绍了近年来提高LED发光亮度和抑制发光效率衰减的最新进展,分析了电子发射层、发光复合区结构、电子阻挡层对LED性能的影响,并展望了其未来的发展趋势.

参考文献

[1]	S.J. Chang;Y.C. Lin;Y.K. Su;C.S. Chang;T.C. Wen;S.C. Shei;J.C. Ke;C.W. Kuo;S.C. Chen;C.H. Liu .Nitride-based LEDs fabricated on patterned sapphire substrates[J].Solid-State Electronics,2003(9):1539-1542.
[2]	Nakada N;Nakaji M;Ishikawa H et al.Improved characteristics of InGaN multiple quantum well light emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire[J].Applied Physics Letters,2000,76:1804.
[3]	Peng W C;Wu Y C S .Improved luminance intensity of InGaN-GaN light-emitting diode by roughening both the pGaN surface and the undoped-GaN surface[J].Applied Physics Letters,2006,89:041116.
[4]	Piprek J .Efficiency droop in nitride-based light-emitting diodes[J].Physical Status Solidi A Applied Research,2010,10:1002.
[5]	Min-Ho Kim;Martin F. Schubert;Qi Dai;Jong Kyu Kim;E. Fred Schubert;Joachim Piprek;Yongjo Park .Origin of efficiency droop in GaN-based light-emitting diodes[J].Applied physics letters,2007(18):183507-1-183507-3-0.
[6]	Sang-Heon Han;Dong-Yul Lee;Sang-Jun Lee;Chu-Young Cho;Min-Ki Kwon;S. P. Lee;D. Y. Noh;Dong-Joon Kim;Yong Chun Kim;Seong-Ju Park .Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes[J].Applied physics letters,2009(23):231123-1--231123-3-0.
[7]	Zhu J H;Zhang S M;Wang H et al.The investigation on carrier distribution in InGaN/GaN multiple quantum well layers[J].Applied Physics Letters,2011,109:093117.
[8]	Jiuru Xu;Martin F. Schubert;Ahmed N. Noemaun;Di Zhu;Jong Kyu Kim;E. Fred Schubert;Min Ho Kim;Hun Jae Chung;Sukho Yoon;Cheolsoo Sone .Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes[J].Applied physics letters,2009(1):011113-1-011113-3-0.
[9]	J. Hader;J. V. Moloney;B. Pasenow;S. W. Koch;M. Sabathil;N. Linder;S. Lutgen .On the importance of radiative and Auger losses in GaN-based quantum wells[J].Applied physics letters,2008(26):261103-1-261103-3-0.
[10]	Rebane YT.;Yavich BS.;Bougrov VE.;Stepanov SI.;Wang WN.;Shreter YG. .Light emitting diode with charge asymmetric resonance tunneling[J].Physica Status Solidi, A. Applied Research,2000(1):121-126.
[11]	Wang P J;Bougrov V E;Rebane Y T.Ⅲ-nitride efficient LEDs[A].San Diego,California,USA,2001:99.
[12]	Chang SJ;Wei SC;Su YK;Lai WC .Nitride-based dual-stage MQW LEDs[J].Journal of the Electrochemical Society,2007(10):H871-H874.
[13]	Hsu, H.-C.,Su, Y.-K.,Huang, S.-J.,Tseng, C.-Y.,Cheng, C.-Y.,Chen, K.-C. .Enhanced Performance of Nitride-Based Blue LED With Step-Stage MQW Structure[J].IEEE Photonics Technology Letters,2011(5):287-289.
[14]	邢艳辉,韩军,刘建平,邓军,牛南辉,沈光地.垒掺In提高InGaN/GaN多量子阱发光特性[J].物理学报,2007(12):7295-7299.
[15]	Liu Naixin,Wang Junxi,Yan Jianchang,Liu Zhe,Ruan Jun,Li Jinmin.Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQW grown by MOCVD[J].半导体学报,2009(11):21-25.
[16]	Martin F. Schubert;Jiuru Xu;Jong Kyu Kim;E. Fred Schubert;Min Ho Kim;Sukho Yoon;Soo Min Lee;Cheolsoo Sone;Tan Sakong;Yongjo Park .Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop[J].Applied physics letters,2008(4):041102-1-041102-3-0.
[17]	Hongping Zhao;Guangyu Liu;Xiao-Hang Li;G. S. Huang;Jonathan D. Poplawsky;S. Tafon Penn;Volkmar Dierolf;Nelson Tansu .Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile[J].Applied physics letters,2009(6):061104-1-061104-3.
[18]	Ziwen Yang;Rui Li;Qiyuan Wei;Tao Yu;Yanzhao Zhang;Weihua Chen;Xiaodong Hu .Analysis of optical gain property in the InGaN/GaN triangular shaped quantum well under the piezoelectric field[J].Applied physics letters,2009(6):061120-1-061120-3-0.
[19]	Tsai, M.-C.;Yen, S.-H.;Kuo, Y.-K. .Investigation of blue InGaN light-emitting diodes with step-like quantum well[J].Applied physics, A. Materials science & processing,2011(2):621-626.
[20]	Han, S.-H.;Lee, D.-Y.;Shim, H.-W.;Kim, G.-C.;Kim, Y.S.;Kim, S.-T.;Lee, S.-J.;Cho, C.-Y.;Park, S.-J. .Improvement of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal wells[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2010(35):354004-1-354004-5.
[21]	Seoung-Hwan Park;Doyeol Ahn;Bun-Hei Koo;Jong-Wook Kim .Dip-shaped InGaN/GaN quantum-well light-emitting diodes with high efficiency[J].Applied physics letters,2009(6):063507-1-063507-3.
[22]	Zhu J H;Zhang S M;Wang H et al.The investigation on carrier distribution in InGaN/GaN multiple quantum well layers[J].Applied Physics Letters,2011,109:093117.
[23]	Sang-Heon Han;Chu-Young Cho;Sang-Jun Lee;Tae-Young Park;Tae-Hun Kim;Seung Hyun Park;Sang Won Kang;Je Won Kim;Yong Chun Kim;Seong-Ju Park .Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes[J].Applied physics letters,2010(5):051113-1-051113-3.
[24]	Jinqiao Xie;Xianfeng Ni;Qian Fan;Ryoko Shimada;Umit Ozgur;Hadis Morkoc .On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers[J].Applied physics letters,2008(12):121107-1-121107-3-0.
[25]	Ru-Chin Tu;Chun-Ju Tun;Shyi-Ming Pan;Chang-Cheng Chuo;J. K. Sheu;Ching-En Tsai;Te-Chung Wang;Gou-Chung Chi .Improvement of Near-Ultraviolet InGaN-GaN Light-Emitting Diodes With an AlGaN Electron-Blocking Layer Grown at Low Temperature[J].IEEE Photonics Technology Letters,2003(10):1342-1344.
[26]	Zhang Yunyan;Fan Guanghan;Yin Yian .Performance enhancement of blue light-emitting diodes without an electronblocking layer by using special designed p-type doped InGaN barriers[J].Optics Express,2012,20(01):A133.
[27]	C. H. Wang;C. C. Ke;C. Y. Lee;S. P. Chang;W. T. Chang;J. C. Li;Z. Y. Li;H. C. Yang;H. C. Kuo;T. C. Lu;S. C. Wang .Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer[J].Applied physics letters,2010(26):261103-1-261103-3.
[28]	王兵,李志聪,姚然,梁萌,闫发旺,王国宏.GaN基发光二极管外延中p型AlGaN电子阻挡层的优化生长[J].物理学报,2011(01):473-478.
[29]	毛清华,江风益,程海英,郑畅达.p-AlGaN电子阻挡层Al组分对Si衬底绿光LED性能影响的研究[J].物理学报,2010(11):8078-8082.
[30]	Choi Suk;Kim Hee Jin;Kim Seong-Soo et al.Improvement of peak quantum efficiency and efficiency droop in Ⅲ-nitride visible light-emitting diodes with an InAlN electron-blocking layer[J].Applied Physics Letters,2010,96(22):221105.

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材料期刊网

抑制GaN基LED发光效率衰减的研究进展

Improvement of Efficiency Droop in GaN-based Light-emitting Diodes

参考文献