磁控溅射法制备用作铜互连阻挡层的钛-铝薄膜

机械工程材料, 2009, 33(5): 83-86.

磁控溅射法制备用作铜互连阻挡层的钛-铝薄膜

邢金柱 ^1, , 刘保亭 ^2, , 霍骥川 ^3, , 周阳 ^4, , 李晓红 ^5, , 李丽 ^6, , 张湘义 ^7, , 彭英才 ^8, , 王侠 ^9,

1.河北大学电信学院,河北保定,071002

2.河北大学物理科学与技术学院铁性材料与器件研究所,河北保定,071002

3.河北大学物理科学与技术学院铁性材料与器件研究所,河北保定,071002

4.河北大学物理科学与技术学院铁性材料与器件研究所,河北保定,071002

5.河北大学物理科学与技术学院铁性材料与器件研究所,河北保定,071002

6.河北大学物理科学与技术学院铁性材料与器件研究所,河北保定,071002

7.河北大学物理科学与技术学院铁性材料与器件研究所,河北保定,071002

8.河北大学电信学院,河北保定,071002

9.河北大学电信学院,河北保定,071002

基金项目: 教育部资助项目(207013) 河北省科学基金(E2008000620) 河北大学青年基金(2005Q08) 国家自然科学基金(50572021;60876055) 国家重点基础研究发展规划(973计划)(2007CB616910)

关键词：铜互连 , 阻挡层 , 钛-铝薄膜 , 射频磁控溅射

Ti-Al Film Used as Diffusion Barrier for Copper Interconnection Deposited by RF Magnetron Sputtering

采用射频磁控溅射法在Si(100)基片上首先沉积了厚度40 nm的非晶钛-铝薄膜,然后在其上又原位生长了厚度100 nm的铜薄膜,制备了铜膜/钛-铝膜/硅试样;对试样分别在400～800℃内进行真空退火处理,用原子力显微镜、X射线衍射仪、四探针测试仪对试样的表面形貌、结晶状态及方块电阻进行了分析.结果表明:当退火温度低于750℃时,试样表面平整,表面粗糙度和方块电阻均较小且基本不随退火温度的升高而改变,此时,非晶钛-铝薄膜能够起到阻挡铜向硅中扩散的作用;当退火温度在800℃时,试样的表面粗糙度和方块电阻急剧增大,此时,非晶钛-铝薄膜已经不能起到阻挡层的作用.

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