在立式MOCVD反应室中,通过对生长氮化镓(GaN)薄膜材料的仿真,发现衬底表面反应物三甲基镓物质的量的浓度分布与实际生长的GaN薄膜的厚度分布一致,同时,仿真结果表明,薄膜的厚度分布与反应室内涡旋的分布相关.通过分析涡旋产生的原因,对反应条件和反应室的几何条件作了进一步优化,发现在较低的反应室压强、较低的壁面温度和较大的气体入口半径条件下,能使涡旋明显减小,提高薄膜生长的均匀性.
参考文献
| [1] | 徐谦,左然,张红.反向流动垂直喷淋式MOCVD反应器设计与数值模拟[J].人工晶体学报,2005(06):1059-1064. |
| [2] | 左然,张红,刘祥林.径向三重流MOCVD反应器输运过程的数值模拟[J].半导体学报,2005(05):977-982. |
| [3] | 钟树泉,任晓敏,王琦,黄辉,黄永清,张霞,蔡世伟.MOCVD反应器热流场的数值模拟研究[J].人工晶体学报,2008(06):1342-1348. |
| [4] | 刘奕,陈海昕,符松.GaN-MOCVD设备反应室流场的CFD数值仿真[J].半导体学报,2004(12):1639-1646. |
| [5] | Zuo R;Zhang H;Liu XL .Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets[J].Journal of Crystal Growth,2006(2):498-508. |
| [6] | Fotiadis D I;Kieda S;Jensen K F .Transport Phenomena in Vertical Reactors for Metalorganic Vapor Phase Epitaxy:I.Effects of Heat Transfer Characteristics,Reactor Geometry,and Operating Conditions[J].Journal of Crystal Growth,1990,102:441-470. |
| [7] | Moffat H;Jensen K F .Complex Flow Phenomena in MOCVD Reactors.I.Horizontal Reactors[J].Journal of Crystal Growth,1986,77:108-119. |
| [8] | Parikh RP;Adomaitis RA .An overview of gallium nitride growth chemistry and its effect on reactor design: Application to a planetary radial-flow CVD system[J].Journal of Crystal Growth,2006(2):259-278. |
| [9] | Theodoropoulos C.;Moffat HK.;Han J.;Mountziaris TJ. .Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy[J].Journal of Crystal Growth,2000(1/2):65-81. |
| [10] | 徐谦,左然.反向流动垂直喷淋式MOCVD反应器生长GaN的化学反应数值模拟[J].人工晶体学报,2007(02):338-343. |
| [11] | Ran Zuo;Qian Xu;Hong Zhang .An inverse-flow showerhead MOVPE reactor design[J].Journal of Crystal Growth,2007(0):425-427. |
| [12] | Fluent 6.0 User's Guide[M].Fluent Inc,2001 |
| [13] | 张进城,郝跃,李培咸,范隆,冯倩.基于透射谱的GaN薄膜厚度测量[J].物理学报,2004(04):1243-1246. |
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