A Method to Adjust Dielectric Property of SiC Powder in the GHz Range

材料科学技术（英文）, 2011, 27(5): 421-425.

^1, , ^2, , ^3, , ^4, , ^5, , ^6, , ^7,

1.College of Mechanical & Electronic Engineering, Xi'an Polytechnic University, Xi'an 710048, China

2.College of Mechanical & Electronic Engineering, Xi'an Polytechnic University, Xi'an 710048, China

3.School of Technical Physics, Xidian University, Xi'an 710071, China

4.College of Mechanical & Electronic Engineering, Xi'an Polytechnic University, Xi'an 710048, China

5.College of Mechanical & Electronic Engineering, Xi'an Polytechnic University, Xi'an 710048, China

6.College of Mechanical & Electronic Engineering, Xi'an Polytechnic University, Xi'an 710048, China

7.State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China

基金项目: the Natural Science Basic Research Plan in Shaanxi Province of China(2009JQ6009) the foundation of Xi'an Polytechnic University(BS0911) The authors gratefully acknowledge the support of the National Natural Scientific Foundation of China(51002113)

A Method to Adjust Dielectric Property of SiC Powder in the GHz Range

Xiaolei Su ^1, , Jie Xu ^2, , Zhimin Li ^3, , Junbo Wang ^4, , Xinhai He ^5, , Chong Fu ^6, , Wancheng Zhou ^7,

1.College of Mechanical & Electronic Engineering, Xi'an Polytechnic University, Xi'an 710048, China

2.College of Mechanical & Electronic Engineering, Xi'an Polytechnic University, Xi'an 710048, China

3.School of Technical Physics, Xidian University, Xi'an 710071, China

4.College of Mechanical & Electronic Engineering, Xi'an Polytechnic University, Xi'an 710048, China

5.College of Mechanical & Electronic Engineering, Xi'an Polytechnic University, Xi'an 710048, China

6.College of Mechanical & Electronic Engineering, Xi'an Polytechnic University, Xi'an 710048, China

7.State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China

Keywords： Silicon carbide

The SiC powders by Al or N doping have been synthesized by combustion synthesis, using Al powder and NH4Cl powder as the dopants and polytetrafluoroethylene as the chemical activator. Characterization by X-ray diffraction, Raman spectrometer, scanning electron microscopy and energy dispersive spectrometer demonstrates the formation of Al doped SiC, N doped SiC and the Al and N co-doped SiC solid solution powders, respectively. The electric permittivities of prepared powders have been determined in the frequency range of 8.2-12.4 GHz. It indicates that the electric permittivities of the prepared SiC powders have been improved by the pure Al or N doping and decrease by the Al and N co-doping. The paper presents a method to adjust dielectric property of SiC powders in the GHz range.

参考文献

[1]	E. Valcheva;M. Baleva;G. Zlateva .Surface and interface-related phonon modes in InN/AlN nanolayer structures[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2009(3):153-155.

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A Method to Adjust Dielectric Property of SiC Powder in the GHz Range

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