膜厚对Zr,Al共掺杂ZnO透明导电薄膜结构和光电性能的影响

人工晶体学报, 2010, 39(1): 169-173.

膜厚对Zr,Al共掺杂ZnO透明导电薄膜结构和光电性能的影响

袁玉珍 ^1, , 王辉 ^2, , 张化福 ^3, , 刘汉法 ^4, , 刘云燕 ^5,

1.山东理工大学理学院,淄博,255049

2.山东理工大学理学院,淄博,255049;山东理工大学材料科学与工程学院,淄博,255049

3.山东理工大学理学院,淄博,255049

4.山东理工大学理学院,淄博,255049

5.山东理工大学理学院,淄博,255049

基金项目: 山东理工大学"功能材料"研究创新项目(CX0602)

关键词：磁控溅射 , Zr,Al共掺杂ZnO , 膜厚 , 透明导电薄膜

Effect of Film Thickness on Structure and Optoelectrical Properties of Zr, Al Co-doped ZnO Transparent Conducting Thin Films

YUAN Yu-zhen ^1, , WANG Hui ^2, , ZHANG Hua-fu ^3, , LIU Han-fa ^4, , LIU Yun-yan ^5,

1.山东理工大学理学院,淄博,255049

2.山东理工大学理学院,淄博,255049;山东理工大学材料科学与工程学院,淄博,255049

3.山东理工大学理学院,淄博,255049

4.山东理工大学理学院,淄博,255049

5.山东理工大学理学院,淄博,255049

Keywords： magnetron sputtering , Zr,Al co-doped ZnO , film thickness , transparent conducting films

采用直流磁控溅射法在玻璃衬底上制备出Zr,Al共掺杂ZnO(AZZO)透明导电薄膜.用XRD和SEM分析和观察了薄膜样品的组织结构和表面形貌.研究表明:制备的AZZO透明导电薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向.另外还研究了薄膜的结构、光学和电学性质随薄膜厚度的变化关系.当薄膜厚度为843 nm时,电阻率具有最小值1.18×10~(-3) Ω·cm,在可见光区(500～800 nm)平均透过率超过93%.

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