在不同的沉积温度下,用射频反应磁控溅射方法在Si(100)衬底和Cu膜间制备Ta-N/Zr阻挡层,研究Zr层的插入对Ta-N扩散阻挡性能的影响.结果表明:不同沉积温度下制备的Ta-N均为非晶态结构;Zr层的插入使Ta-N阻挡层的失效温度至少提高100℃,在800℃仍能有效地阻止Cu的扩散.阻挡性能提高的主要原因是高温退火时形成低接触电阻的Zr-Si层.
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