随着大功率半导体器件的发展,其局部热流密度急剧增加.为防止器件功能失效,需要可靠的建模技术来研究器件的热学行为,进而指导其冷却设计.本文采用非等温能量平衡模型研究了自热效应对栅长为500 nm的多指GaAs赝配高电子迁移率固态微波功率器件(PHEMT)的热学特性的影响.基于泊松方程、连续性方程、输运方程和晶格热方程,数值求解得到了器件的热点位置和温度分布,并通过实验进行了验证.最后,应用(火积)理论,进一步分析了(火积)耗散热阻在评价器件热学性能方面的适用性.
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