高温氨化Ga2O3形成GaN粉末

1.山东师范大学,山东,济南,250014

2.山东师范大学,山东,济南,250014

3.山东师范大学,山东,济南,250014

4.山东师范大学,山东,济南,250014

基金项目: 国家自然科学基金(90201025,60071006)

Synthesis of Gallium Nitride(GaN)Powder by Ammoniating Ga2O3 under High Temperature

采用NH3为N源,以Ga2O3粉末为Ga源高温氨化形成GaN粉末.用X射线衍射(XRD)、扫描电子显微镜(SEM)、选择区电子衍射(SAED)对粉末进行结构、形貌分析.结果表明:当Ga源温度为850℃时得到六方纤锌矿结构的GaN晶体颗粒.

[1]	梁春广,张冀.GaN--第三代半导体的曙光[J].半导体学报,1999(02):89-99.
[2]	Lee S H;Nahm K S;Suh E K.Characterization of Mg-Doped GaN Micro-Crystals Grown by Direct Reaction of Gallium and Ammonia[J].Physica Status Solidi,2001(b228):371-373.
[3]	Jae-Ryoung Kim;Hwangyou Oh;Hye Mi So et al.Schottky Diodes Based on a Single GaN Nanowire[M].Institute of Physics Publishing Nanotecnology,2002,13:701-704.
[4]	Zhang J.;Wang XF.;Wang YW.;Zhang LD.;Peng XS. .Micro-Raman investigation of GaN nanowires prepared by direct reaction Ga with NH3[J].Chemical Physics Letters,2001(5-6):372-376.
[5]	Shi WS.;Wang N.;Lee CS.;Lee ST.;Zheng YF. .Microstructures of gallium nitride nanowires synthesized by oxide-assisted method[J].Chemical Physics Letters,2001(5-6):377-380.
[6]	Millet P;Calka A;Williams J S et al.Formation of Gallium Nitride by a Novel Hot Mechanical Alloying Process[J].Applied Physics Letters,1993,63:2505.
[7]	Li H D;Yang H B;Yu S et al.Synthesis of Ultrafine Gallium Nitride Powder by Direct Current Arc Plasma[J].Method Appl Phys Lett,1996,69:1285.

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