铁电ＰＺＴ薄膜的极化印刻（ｉｍｐｒｉｎｔｉｎｇ）是ＰＺＴ不挥发存储器失效的重要原因之一．本文研究了不同钇量改性的ＰＺＴ（４０／６０）铁电薄膜在高温（１２０℃）和偏置电压下的极化印刻特性，发现适量的钇掺杂，改善了ＰＺＴ薄膜电容器单元的极化印刻．
Imprint failure is one of the important failure mechanisms for PZT nonvolatile memo- ries. The imprint properties of Y-dopped PZT(40/60) thin films at bias voltages and a temperature of 120℃ were investigated. The results obtained show that the imprint-resistant properties of the PZT thin films are enhanced by a suitable Y dopant concentration.
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