具有介电、铁电、压电等特性的铁电薄膜在动态随机存储器、移相器等功能器件上拥有广泛的应用前景,但其疲劳现象已成为应用的严重障碍,在衬底与铁电薄膜之间添加氧化物过渡层可以改善这种现象.综述了普通氧化物、钙钛矿型氧化物、超导氧化物等作为过渡层材料对铁电薄膜结构与性能的影响.
Ferroelectric thin films have attracted much attention in application of dynamic random access devices and phase shifters because of the excellent dielectric,ferroelectric and piezoelectric properties. But fatigue becomes one of the most serious impediment. According to literature,adding oxide buffer layers between substrates and ferroelectric thin films can improve this phenomenon. The influence of buffer layers about common oxide, perovskite oxide and superconduct oxide on structure and property of ferroelectric thin films is introduced.
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