采用真空热蒸发VE、射频溅射沉积RF和近距离升华CSS技术制备CdTe薄膜,并对其进行掺杂研究.样品利用XRD、SEM、紫外-可见分光光度计和霍尔系数测量系统进行测试.结果显示,CSS制备的CdTe薄膜与VE和RF法制备的薄膜相比,晶粒大,晶形好.适当的掺杂某些元素,适当的掺杂量,可以改善CdTe薄膜的结晶性能,提高其导电性能.掺杂对CdTe薄膜的光能隙影响不大.
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