分别采用磁控溅射法和溶胶-凝胶法(Sol-gel)制备了(La0.5Sr0.5)CoO3 (LSCO)和Pb(Zr1-xTix)O3(PZT)薄膜,在Pt(111)/Ti/SiO2/Si基片上构架了LSCO/Pb(Zr0.4Ti0.6)O3(PZT(40/60))/LSCO和LSCO/Pb(Zr0.2Ti0.8)O3(PZT(20/80))/LSCO铁电电容器,研究了两种铁电电容器的结构和性能.XRD结构分析表明:两种四方相的不同Zr/Ti比例的PZT薄膜均为结晶良好的多晶钙钛矿结构.在5V测试电压下,LSCO/PZT(40/60)/LSCO和LSCO/PZT(20/80)/LSCO两种铁电电容器的剩余极化强度(Pr)和矫顽场(Ec)分别为:28μC/cm2和1.2V以及32μC/cm2和2V.相对于PZT(40/60),PZT(20/80)具有较大的剩余极化强度和矫顽场,是由于其矩形度(c/a)较大.两种电容器都具有较好的脉宽依赖性和抗疲劳性.在5V的测试电压下,LSCO/PZT(40/60)/LSCO电容器的漏电流密度为3.2 × 10-5 A/cm2,LSCO/PZT(20/80)/LSCO电容器的漏电流密度为3.11×10-4 A/cm2,经拟合分析发现:在0~5 V的范围内,两种电容器都满足欧姆导电机制.
参考文献
[1] | Jung HJ.;Kim TS. .ELECTRICAL CHARACTERISTICS OF HETEROPROCESSED PB(ZR0.52TI0.48)O-3 FILMS[J].Journal of Applied Physics,1996(12):9245-9249. |
[2] | Floquet N.;Gaucher P.;Hector J. .Correlation between structure, microstructure, and ferroelectric properties of PbZr0.2Ti0.8O3 integrated film: Influence of the sol-gel process and the substrate[J].Journal of Applied Physics,1998(7):3815-3826. |
[3] | 王宽冒,刘保亭,倪志宏,赵敬伟,李丽,李曼,周阳.SrRuO3导电层对快速退火制备Pb(Zr,Ti)O3薄膜结构和性能的影响[J].人工晶体学报,2010(03):608-612,627. |
[4] | Hiroshi Funakubo;Kouji Tokita;Takahiro Oikawa;Masanori Aratani;Keisuke Saito .Comparison of crystal structure and electrical properties of tetragonal and rhombohedral Pb(Zr,Ti)O_(3) films prepared at low temperature by pulsed-metalorganic chemical vapor deposition[J].Journal of Applied Physics,2002(9):5448-5452. |
[5] | San-Yuan Chen;Chia-Liang Sun .Ferroelectric characteristics of oriented Pb(Zr_(1-x)Ti_(x))O_(3) films[J].Journal of Applied Physics,2001(6):2970-2974. |
[6] | Kukhar VG;Pertsev NA;Kohlstedt H;Waser R .Polarization states of polydomain epitaxial Pb(Zr1-xTix)O-3 thin films and their dielectric properties[J].Physical review, B. Condensed matter and materials physics,2006(21):4103-1-4103-9-0. |
[7] | Baedi J;Hosseini SM;Kompany A .The effect of excess titanium and crystal symmetry on electronic properties of Pb(Zr1-xTix)O-3 compounds[J].Computational Materials Science,2008(4):909-916. |
[8] | Khan MA;Comyn TP;Bell AJ .Leakage mechanisms in bismuth ferrite-lead titanate thin films on Pt/Si substrates[J].Applied physics letters,2008(7):72908-1-72908-3-0. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%