以不同温度真空原位退火工艺为手段,促使制备在单晶Si(100)和Al2O3基底上的Cu-W薄膜发生相变.用X射线衍射(XRD)分析晶体取向,偏振相位移技术分析薄膜残余应力.结果表明,随退火温度变化,薄膜相变呈现连续变化,由初始的非晶态晶化,出现类W的亚稳态固溶体相,以及随退火温度的进一步增加,发生Spinodal分解,亚稳固溶体完全分解为W和Cu两相.薄膜发生相变时产生拉应力作用,而在晶粒生长阶段,拉应力释放.
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