聚酰亚胺(PI)材料具有介电常数低,分解温度高及化学稳定性好等优点,是很有前途的电子封装材料.Cu具有低的电阻和高的抗电迁移能力,是PI基板金属化的首选材料.采用物理气相沉积(PVD)方法在PI基板上沉积Cu薄膜,利用TiN陶瓷薄膜阻挡Cu向PI基板内部扩散.研究热处理条件下TiN陶瓷薄膜阻挡层的阻挡效果、Cu膜电阻变化以及Cu膜的结合强度,俄歇谱图分析表明TiN可以有效地阻挡Cu向PI内的扩散.300℃热处理消除了Cu膜内应力,提高了Cu膜的结合强度.
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