LiGaO2单晶是目前所知的GaN最为理想的衬底材料,本研究用金属有机物气相沉积法(MOCVD)在LiGaO2(001)衬底上进行了外延生长GaN膜的试验,生长出了表面较为平整的GaN外延膜.应用原子力显微镜(AFM)、X射线粉末衍射(XRD)和高分辨X射线双晶衍射分别对衬底对外延膜和衬底材料进行了分析测试.结果表明,用MOCVD法可以在LiGaO2(001)衬底上生长出较高质量的无掺杂GaN(0001)外延膜.但由于MOCVD法是在高温还原气氛中生长GaN外延膜的,LiGaO2在这种气氛中不够稳定,实验发现衬底材料在生长过程中部分样品发生开裂,但没有发生相变.
LiGaO_2 is the most promising substrate newly found for the epitaxy of GaN. Mirror-like GaN(0001) films were
grown on LiGaO2(001) substrates by using MOCVD. The GaN films and substrates were investigated by means of AFM, XRD and X-ray double-crystal diffraction.
The result shows that a preferable quality of GaN(0001) films can be grown on LiGaO2(001) substrates by using MOCVD. LiGaO2 being unstable under the conditions
of MOCVD which should be operated at high temperature and in deoxidize ambience, LiGaO2 substrate cracks appear easily in the growth process, but no phase changes.
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