采用化学气相沉积(CVD)方法在有金催化层的硅片上制备了SnO2纳米线.用扫描电子显微镜(SEM)及X射线衍射仪(XRD)对其形貌及结构进行了表征,分析了蒸发温度及氧气流量对SnO2相貌的影响.对比了SnO2纳米线在室温及150℃条件下的氢气敏感特性,结果表明SnO2纳米线在150℃下对氢气的灵敏度高达13.3,响应及回复时间≤5 s,表现出了良好的氢敏性能.
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