采用固相反应合成法,以硅粉和炭黑为原料,分别在0.1MPa的氩气和氮气气氛中合成β-SiC粉体.通过X射线衍射和扫描电镜对合成粉体的物相、微观结构及形貌进行了表征.同时在8.2～12.4GHz频率范围内进行了介电性能测试.结果表明,在氩气中合成pSiC粉体其晶格参数小于在氮气中合成粉体的晶格参数,两者均小于标准值,但介电参数表现出了相反的趋势.讨论了合成机理和气氛对SiC介电性能的影响.
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