研究了高压Ar气氛中750℃低温下Tl2O分压对Tl2Ba2CaCu2O8超导薄膜相组成及其性能的影响.结果表明采用名义比为Tl1.9Ba2Ca2Cu3Oy的混合物作铊源时,生成的Tl2O分压达到最佳值.在该Tl2O分压下,获得了单相c取向的Tl2Ba2CaCu2O8超导薄膜,其Tc值达到108K;高于该分压时,薄膜中出现Tl2Ca3O6、Tl2O3等杂相,导致膜面粗糙度增大和Tc值下降;低于最佳Tl2O分压,薄膜中生成了Tl2Ba2CaCu2O8和Tl2Ba2Ca2Cu3O10的共生相,导致Tc值下降;而Tl2O分压的进一步降低,则薄膜在铊化中不形成超导相.
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