InAs薄膜的分子束外延生长与表面形貌及表面重构分析

材料导报, 2013, 27(4): 90-92.

InAs薄膜的分子束外延生长与表面形貌及表面重构分析

王继红 ^1, , 罗子江 ^2, , 周勋 ^3, , 张毕禅 ^4, , 郭祥 ^5, , 丁召 ^6,

1.贵州大学理学院,贵阳550025

2.贵州大学理学院,贵阳550025;贵州财经学院教育管理学院,贵阳550004

3.贵州大学理学院,贵阳550025;贵州师范大学物理与电子科学学院,贵阳550001

4.贵州大学理学院,贵阳550025

5.贵州大学理学院,贵阳550025

6.贵州大学理学院,贵阳550025

基金项目: 贵州省科学技术基金(黔科合J字[2011]2095号) 贵州省优秀科技教育人才省长专项基金(黔省专合字(2009)114号) 2010年度贵州财经学院博士基金贵州大学青年教师科研基金([2012]001号) 国家自然科学基金(60866001)

关键词： InAs薄膜 , 分子束外延 , 反射高能电子衍射 , 扫描隧道显微镜 , 表面重构

MBE Growth and STM Analysis of Surface Morphology and Reconstructions of InAs Films

利用带有反射高能电子衍射(RHEED)仪的分子束外延(MBE)方法,通过RHEED图像演变实时监控薄膜生长状况,采用RHEED强度振荡测量薄膜生长速率,在InAs(001)基片上同质外延InAs薄膜.利用扫描隧道显微镜(STM)对MBE生长的InAs薄膜表面形貌以及表面重构进行扫描分析,证实样品表面为原子级平整,并指出样品表面处于β2(2×4)与α2(2×4)两种重构混合的重构相.

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InAs薄膜的分子束外延生长与表面形貌及表面重构分析

MBE Growth and STM Analysis of Surface Morphology and Reconstructions of InAs Films

参考文献