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以Au膜作为催化剂和大晶粒多晶Si薄膜为衬底,利用固-液-固生长机制,制备出直径在30~ 100 nm和长度为几百微米的高密度Si纳米线.实验研究了退火温度、生长时间和N2流量对Si纳米线生长的影响.结果表明,随着退火温度的升高,生长时间的延长和N2流量的增加,Si纳米线的长度和密度都显著增加.对不同生长时间下获得的Si纳米线样品进行了X射线衍射测量,结果显示随着生长时间的延长,多晶Si薄膜和表面的Au膜成分都在减少.光致发光谱则显示出弱的蓝光发射和强的红光发射特性,前者应是由非晶SiOx壳层中的氧空位发光中心引起,后者则应归因于Si纳米线芯部与非晶SiOx壳层之间界面区域附近中的Si =O双键态或非桥键氧缺陷中心.

参考文献

[1] Lee, SK;Lee, SY;Rogdakis, K;Jang, CO;Kim, DJ;Bano, E;Zekentes, K .Si nanowire p-FET with asymmetric source-drain I-V characteristics[J].Solid State Communications,2009(11/12):461-463.
[2] S.F. Feste .Silicon nanowire FETs with uniaxial tensile strain[J].Solid-State Electronics,2009(12):1257-1262.
[3] Huang B;Hsu J;Huang C;Shih Y;Lu K .Silicon nanowire networks for the application of field effect phototransistor[J].Materials science & engineering, C. Biomimetic and supramolecular systems,2007(5/8):1197-1200.
[4] Sato S;Kamimura H;Arai H et al.Electrical Characterization of Si Nanowire Field-Effect Transistors with Semi Gate-Around Structure Suitable for Integration[J].Solid-State Electronics,2010,54:925-928.
[5] 22 nm silicon nanowire gas sensor fabricated by trilayer nanoimprint and wet etching[J].Microelectronic engineering,2010(5/8):927.
[6] Lithography guided horizontal growth of silicon nanowires for the fabrication of ultrasensitive piezoresistive strain gauges[J].Microelectronic engineering,2010(5/8):1270.
[7] Zhang, GJ;Zhang, L;Huang, MJ;Luo, ZHH;Tay, GKI;Lim, EJA;Kang, TG;Chen, Y .Silicon nanowire biosensor for highly sensitive and rapid detection of Dengue virus[J].Sensors and Actuators, B. Chemical,2010(1):138-144.
[8] Gunawan, Oki;Guha, Supratik .Characteristics of vapor-liquid-solid grown silicon nanowire solar cells[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2009(8):1388-1393.
[9] Kumar, D.;Srivastava, S.K.;Singh, P.K.;Husain, M.;Kumar, V. .Fabrication of silicon nanowire arrays based solar cell with improved performance[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2011(1):215-218.
[10] Huang, JS;Hsiao, CY;Syu, SJ;Chao, JJ;Lin, CF .Well-aligned single-crystalline silicon nanowire hybrid solar cells on glass[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2009(5):621-624.
[11] Shu, QK;Wei, JQ;Wang, KL;Zhu, HW;Li, Z;Jia, Y;Gui, XC;Guo, N;Li, XM;Ma, CR;Wu, DH .Hybrid Heterojunction and Photoelectrochemistry Solar Cell Based on Silicon Nanowires and Double-Walled Carbon Nanotubes[J].Nano letters,2009(12):4338-4342.
[12] Zhu J;Yu ZF;Burkhard GF;Hsu CM;Connor ST;Xu YQ;Wang Q;McGehee M;Fan SH;Cui Y .Optical Absorption Enhancement in Amorphous Silicon Nanowire and Nanocone Arrays[J].Nano letters,2009(1):279-282.
[13] Green M A .Crystalline and-film Silicon Solar Cells:State of the Art and Future Potential[J].Journal of Solar Energy Engineering,2003,74(03):181-192.
[14] Armin G. Aberle .Thin-film solar cells[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2009(17):4706-4710.
[15] Budianu E.;Purica M.;Manea E.;Rusu E.;Gavrila R.;Danila M. .Optical improved structure of polycrystalline silicon-based thin-film solar cell[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2002(1/4):223-229.
[16] 彭英才,范志东,白振华,马蕾.Si纳米线的固-液-固可控生长及其形成机理分析[J].物理学报,2010(02):1169-1174.
[17] Peng Y C;Fan Z D;Bai Z H;el al .Blue Luminescent Properties of Silicon Nanowizes Grown by a Solid-Liquid-Solid Method[J].Chinese Physics Letters,2010,27(05):057305.
[18] Liao L S;Bao X M;Zheng X Q et al.Blue Photoluminescence from Si + Implanted SiO2 Films on CrystaLline Si[J].Applied Physics Letters,1996,68(06):850.
[19] Feng SQ.;Zhang HZ.;Bai ZG.;Ding Y.;Yu DP. .The growth mechanism of silicon nanowires and their quantum confinement effect[J].Journal of Crystal Growth,2000(2/3):513-517.
[20] Wolkin MV.;Fauchet PM.;Allan G.;Delerue C.;Jorne J. .Electronic states and luminescence in porous silicon quantum dots: The role of oxygen[J].Physical review letters,1999(1):197-200.
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