以高纯SiH4为气源,采用低压化学气相沉积方法在p型〈100〉晶向单晶硅上620℃制备纳米多晶硅薄膜,对不同薄膜厚度纳米多晶硅薄膜分别在700、800、900℃进行高温真空退火,通过X射线衍射(XRD)、Raman光谱(Raman)、场发射扫描电子显微镜(SEM)和原子力显微镜(AFM)研究薄膜厚度、退火温度对薄膜结晶取向、表面形貌等结构特性影响.结果表明,随薄膜厚度增加,薄膜取向显著且多晶特征明显,沉积薄膜多晶取向为〈111〉、〈220〉和〈311〉晶向,择优取向为〈111〉晶向,TO模强度减弱且加宽,晶粒大小增加;同一薄膜厚度,随真空退火温度升高,X射线衍射峰强度增强,TO模强度增强.
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