氨气流量对GaN纳米线生长及性能的影响

功能材料, 2010, 41(2): 264-267.

氨气流量对GaN纳米线生长及性能的影响

曹玉萍 ^1, , 薛成山 ^2, , 石锋 ^3, , 孙海波 ^4, , 刘文军 ^5, , 郭永福 ^6,

1.山东师范大学,物理与电子科学学院半导体研究所,山东,济南,250014

2.山东师范大学,物理与电子科学学院半导体研究所,山东,济南,250014

3.山东师范大学,物理与电子科学学院半导体研究所,山东,济南,250014

4.山东师范大学,物理与电子科学学院半导体研究所,山东,济南,250014

5.山东师范大学,物理与电子科学学院半导体研究所,山东,济南,250014

6.山东师范大学,物理与电子科学学院半导体研究所,山东,济南,250014

基金项目: 国家自然科学基金(90201025;90301002)

关键词： GaN , 纳米线 , 氨气流量 , 溅射 , 生长机制

Effect of the ammonia flow rate on the growth and characterization of GaN nanowires

CAO Yu-ping ^1, , XUE Cheng-shan ^2, , SHI Feng ^3, , SUN Hai-bo ^4, , LIU Wen-jun ^5, , GUO Yong-fu ^6,

1.山东师范大学,物理与电子科学学院半导体研究所,山东,济南,250014

2.山东师范大学,物理与电子科学学院半导体研究所,山东,济南,250014

3.山东师范大学,物理与电子科学学院半导体研究所,山东,济南,250014

4.山东师范大学,物理与电子科学学院半导体研究所,山东,济南,250014

5.山东师范大学,物理与电子科学学院半导体研究所,山东,济南,250014

6.山东师范大学,物理与电子科学学院半导体研究所,山东,济南,250014

Keywords： GaN , nanowires , ammonia flow rate , sputtering , growth mechanism

利用磁控溅射技术在Si衬底上沉积Ga_2O_3/Co薄膜,然后在不同氨气流量下于950℃退火15min.采用X射线衍射(XRD)、扫描电子显微镜(SEM)、傅立叶红外吸收(FTIR)光谱、高分辨透射电子显微镜(HRTEM)和光致发光谱(PL)对样品进行了分析表征.结果表明,氨气流量对GaN纳米线的生长及性能有很大影响.简单讨论了GaN纳米线的生长机理.

Ga_2O_3/Co films were deposited on the Si substrates through magnetron sputtering technique.Then the films were annealed at 950℃ for 15min at different ammonia flow rate.The samples were characterized by X-ray diffraction (XRD),scanning electron microscopy (SEM),Fourier transformed infrared (FTIR) spectroscopy,high resolution transmission microscopy (HRTEM) and photoluminescence (PL).The results show that the ammonia flow rate had a great effect on the growth and characterization of GaN nanowires.The growth mechanism is briefly discussed.

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