在热氧化硅片的衬底上真空蒸镀了1层9,9′-联蒽的薄膜。利用原子力显微镜和X射线光电子能谱对其表面及界面的形貌和电子状态进行了分析。结果发现表面极不平整,存在大量裂缝和空隙,并吸附了空气中大量的气体分子;9,9′-bianthracene薄膜中的氧,主要来自表面吸附的氧气和水分子的扩散以及湿氧氧化时残留在氧化层中水分子和氧分子的扩散。所以对OFET而言,采用溅射工艺制备的SiO2层应比热氧化生长的SiO2层更合适。
The 9,9′-bianthracene was deposited on SiO2 with dry oxidation by vacuum evaporation.Its morphology is characterized by atomic force microscopy（AFM）,and the electron states are investigated by X-ray photoelectron spectroscopy（XPS）.Analysis shows unwell distributed and film quality of 9,9′-bianthracene on SiO2 was very rough with many cracks and pores,which can lead to heavy absorption of gas molecules.The oxygen can only result from the diffusion of O in the SiO2 layer and of H2O and O2 molecules absorbed at the CuPc film surface.SiO2 layers produced by spurting technology are better than those produced by oxidation technology in OFET.
参考文献
| [1] | 李建丰,常文利,张春林,张福甲.9,9'-联蒽薄膜的AFM和XRD研究[J].功能材料,2010(08):1379-1382. |
| [2] | Li JF;Chang WL;Tao CL;Ou GP;Zhang FJ .Synthesis, Characterization of 9, 9 '-Bianthracene and Fabrication of 9, 9 '-Bianthracene Field-Effect Transistors[J].Chinese physics letters,2008(12):4476-4479. |
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