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综述了多孔硅电致发光研究进展.阐述了多孔硅液相和全固态电致发光体系及其发光特点,并详细介绍了多孔硅复合体系的制备方法和发光特性.

参考文献

[1] Canham L T .[J].Applied Physics Letters,1990,57(10):1046.
[2] Halimaoui A;Oules C;Bomchil G et al.[J].Applied Physics Letters,1991,59(03):304.
[3] Wang RQ.;Cai SM.;Liu ZF.;Zhang SL.;Li JJ. .Two-peak electroluminescence of porous silicon in persulphate solution[J].Applied physics letters,1998(8):924-926.
[4] Hidenori Noguchi;Toshihiro Kondo;Kei Murakoshi;Kohei Uosaki .Visible electroluminescence from n-type porous silicon/electrolyte solution interfaces: time-dependent electroluminescence spectra[J].Journal of the Electrochemical Society,1999(11):4166-4171.
[5] Saren A A;Kuznetsov S N;Pikulev V B et al.[J].Semiconductors(Translation of Fizika i Tekhnika Poluprovodnikov,2002,36(10):1184.
[6] 张占军,李经建,武斌,刘忠范,蔡生民.多孔硅于甲酸-甲酸钠溶液阳极偏压下的电致发光研究[J].化学学报,2001(10):1587-1591.
[7] 张占军,李经建,张波,蔡生民.多孔硅表面性质导致电致发光的进一步论证[J].电化学,2002(01):9-14.
[8] Axel Richter et al.[J].IEEE Transactions on Electron Devices,1991(12):691.
[9] Fereydoon Namavar;Maruska H Paul;Kalkhoran Nader M .[J].Applied Physics Letters,1992,60(20):2514.
[10] Bernard Gelloz;Nobuyoshi Koshida .Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode[J].Journal of Applied Physics,2000(7):4319-4324.
[11] Kohsuke Nishimura;Yasuyuki Nagao;Noriaki ikeda .[J].Japanese Journal of Applied Physics,1998,37:1303.
[12] Zhiliang Chen;Gijs Bosman;Romulo Ochoa .[J].Applied Physics Letters,1993,62(07):708.
[13] Selena Chan;Philippe M. Fauchet .Tunable, narrow, and directional luminescence from porous silicon light emitting devices[J].Applied physics letters,1999(2):274-276.
[14] 李宏建,瞿述,剪之渐,彭景翠,向建南.多孔硅表面钝化对其发光性能的影响[J].化学物理学报,2000(04):492-496.
[15] Gelloz B;Sano H;Boukherroub R et al.[J].Applied Physics Letters,2003,83(12):2342.
[16] Toshiro futagi;Takahiro Matsumoto;Masakazu Katsuno et al.[J].Japanese Journal of Applied Physics,1992,31:L616.
[17] Peter Steiner;Frank Kozlowski;Marek Wielunski et al.[J].Japanese Journal of Applied Physics,1994,33:6075.
[18] Tsybeskov L;Duttagupta SP;Hirschman KD;Fauchet PM;Moore KL;Hall DG;ROCHESTER INST TECHNOL DEPT MICROELECT ENGN ROCHESTER NY 14623.;UNIV ROCHESTER DEPT PHYS & ASTRON ROCHESTER NY 14627. .Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide[J].Applied physics letters,1997(14):1790-1792.
[19] Herman A. Lopez;Philippe M. Fauchet .Room-temperature electroluminescence from erbium-doped porous silicon[J].Applied physics letters,1999(25):3989-3991.
[20] Gokarna Anisha;Pavaskar N R;Sathaye S D et al.[J].Journal of Applied Physics,2002,92(04):2118.
[21] Nobuyoshi Koshida;Hidekin koyama;yuko Yamamoto et al.[J].Applied Physics Letters,1993,63(19):2655.
[22] Li Kun-his;Diaz Dennis C;He Yuesong et al.[J].Applied Physics Letters,1994,64(18):2394.
[23] Bsiesy A.;Ermolieff A.;Muller F.;Gaspard F.;Nicolau YF. .ELECTROLUMINESCENCE FROM N(+)-TYPE POROUS SILICON CONTACTED WITH LAYER-BY-LAYER DEPOSITED POLYANILINE[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1995(1/2):43-48.
[24] Jun-hua Fan,Mei-xiang Wan,Dao-ben Zhu.HETEROJUNCTION DIODES OF POROUS SILICON WITH SOLUBLE POLYANILINE[J].高分子科学(英文版),1999(04):329-335.
[25] Juan Antipan Lara;Poopathy Kathirgamanathan .[J].Synthetic Metals,2000,110:233.
[26] Kazuya Tada;Maki Hamaguchi;Akihiko Hosono et al.[J].Japanese Journal of Applied Physics,1998,36:1418.
[27] Wakefield G;Dobson J;Foo Y Y et al.[J].Semiconductor Science and Technology,1997,12:1304.
[28] Wakefield G;Dobson P J;Hutchison J L et al.[J].Materials Science and Engineering,1998,B51:141.
[29] Li W;Andrienko I;Haneman D .[J].Journal of Applied Physics,2000,88(01):316.
[30] Dong Y.;Parkinson M.;Bayliss SC. .Investigation of electroluminescence from Au/poly-4-dicyanomethylene-4H-cyclopenta[2,1-b : 3,4-b ']dithiophene porous Si/Si/Al light emitting diodes[J].Applied physics letters,1998(11):1344-1346.
[31] Dong Yaming;Zhong Juhua;Xie Xianghua .[J].Chinese Journal of Chemical Physics,2001,14(04):433.
[32] Monastyrskii L;Lesiv T;Olenych I .[J].Thin Solid Films,1999,343-344:335.
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