采用脉冲激光沉积工艺在不同条件下以Si(111)为衬底制备了Zno薄膜.通过对不同氧压下(0～50Pa)沉积的样品的室温PL谱测试表明,氧气氛显著地提高了薄膜的发光质量,在50Pa氧气中沉积的ZnO薄膜具有最强的近带边UV发射.XRD测试说明在氧气氛中得到的薄膜结晶质量较差,没有单一的(002)取向.利用-低温(500℃)沉积的ZnO薄膜作缓冲层,得到了高质量的ZnO外延膜.与直接沉积的ZnO膜相比,生长在缓冲层上的ZnO膜展现出规则的斑点状衍射花样,而且拥有更强的UV发射和更窄的UV峰半高宽(98meV).对不同温度下沉积的缓冲层进行了RHEED表征,结果表明,在600～650℃之间生长缓冲层,有望进一步改善ZnO外延膜的质量.
参考文献
| [1] | Look DC. .Recent advances in ZnO materials and devices[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2001(1/3):383-387. |
| [2] | Ryu Y;Lee T S;Lubguban J A et al.[J].Applied Physics Letters,2006,88:241108. |
| [3] | Ye Z Z;Lv J G;Zhang Y Z et al.[J].Applied Physics Letters,2007,91:113503. |
| [4] | Sun, JC;Liang, HW;Zhao, JZ;Bian, JM;Feng, QJ;Hu, LZ;Zhang, HQ;Liang, XP;Luo, YM;Du, GT .Ultraviolet electroluminescence from n-ZnO : Ga/p-ZnO : N homojunction device on sapphire substrate with p-type ZnO : N layer formed by annealing in N2O plasma ambient[J].Chemical Physics Letters,2008(4/6):548-551. |
| [5] | Look D C;Slaflin B et al.[J].Phys Star Sol (h),2004,241:624-630. |
| [6] | 赵杰,胡礼中,宫爱玲,刘维峰.衬底温度对PLD法制备ZnO薄膜结构及发光特性的影响[J].功能材料,2008(05):724-726,729. |
| [7] | Wang ZY;Hu LZ;Zhao J;Sun J;Wang ZJ .Effect of the variation of temperature on the structural and optical properties of ZnO thin films prepared on Si (111) substrates using PLD[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2005(1):53-57. |
| [8] | Vanheusden K;Seager C H;Warren W L et al.[J].Applied Physics Letters,1996,68:403-405. |
| [9] | Gu Y;Li X;Yu W et al.[J].Journal of Crystal Growth,2007,305:36-39. |
| [10] | Nahhas A;Kim H K;Blachere J et al.[J].Applied Physics Letters,2001,78:1511-1513. |
| [11] | Xiu F;Yang Z;Zhao D et al.[J].Journal of Crystal Growth,2006,286:61-65. |
| [12] | Li X;Zhang B;Zhu H et al.[J].Applied Surface Science,2008,254:2081-2084. |
| [13] | Jung YS;Kononenko O;Kim JS;Choi WK .Two-dimensional growth of ZnO epitaxial films on c-Al2O3(0001) substrates with optimized growth temperature and low-temperature buffer layer by plasma-assisted molecular beam epitaxy[J].Journal of Crystal Growth,2005(3/4):418-424. |
| [14] | Kim HS;Pearton SJ;Norton DP;Ren F .Pulsed laser deposition of high-quality ZnO films using a high[J].Applied physics, A. Materials science & processing,2008(2):255-259. |
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