采用电沉积法对自制大深径比盲孔(直径7.7～7.8 μm,深度78 μm)多孔硅进行金属钯填充.镀液组成和工艺条件为:PdCl2 8.8 g/L,KCl 15.0 g/L,NH3·H2O 50 mL/L,乙醇和水各50％(体积分数),pH 8～9,电压15V,电流1.5 mA,惰性气体搅拌,时间17h.采用扫描电镜和能谱仪分析了钯在多孔硅中的填充情况.结果表明,金属钯在多孔硅盲孔中实现了满载填充,并在孔的外表面也有沉积.本工艺镀液组成简单,为制备三维硅基氚电池提供了技术基础.
参考文献
| [1] | MVS Chandrashekhar;Christopher I. Thomas;Hui Li .Demonstration of a 4H SiC Betavoltaic Cell[J].Materials Science Forum,2006(Pt.2):1351-1354. |
| [2] | J. P. Clarkson;W. Sun;K. D. Hirschman;L. L. Gadeken;P. M. Fauchet .Betavoltaic and photovoltaic energy conversion in three-dimensional macroporous silicon diodes[J].Physica Status Solidi, A. Applied Research,2007(5):1536-1540. |
| [3] | Chen, H.;Jiang, L.;Chen, X. .Design optimization of GaAs betavoltaic batteries[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2011(21):215303-1-215303-4. |
| [4] | DUGGIRALA R;LI H;LAL A.Active circuits for ultra-high efficiency micropower generators using nickel-63 radioisotope[A].,2006:1648-1655. |
| [5] | Wei-Ping Dow;Chih-Chan Li;Yong-Chih Su;Shao-Ping Shen;Chen-Chia Huang;Cliff Lee;Bob Hsu;Shar Hsu .Microvia filling by copper electroplating using diazine black as a leveler[J].Electrochimica Acta,2009(24):5894-5901. |
| [6] | Wei-Ping Dow;Ming-Yao Yen;Sian-Zong Liao;Yong-Da Chiu;Hsiao-Chun Huang .Filling mechanism in microvia metallization by copper electroplating[J].Electrochimica Acta,2008(28):8228-8237. |
| [7] | 謝嘉民;林琨程;張世杰 等.150 nm深次微米小孔的電鍍铜技衍[J].毫微米通訊,2001,8(01):17-22. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%