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采用化学溶液分解法(CSD)在p型Si<100>衬底上制备了(Bi0.8Ce0.2)2Ti2O7薄膜,采用X射线衍射技术研究了薄膜的结构和结晶性.研究表明:Ce3+部分取代Bi3+能够显著提高Bi2Ti2O7薄膜的相稳定性.同时还研究了薄膜的电容-电压特性、介电常数、介电损耗.结果表明,该薄膜具有良好的介电特性.

参考文献

[1] Shao Wei Wang;Hong Wang;Xianming Wu .Rapid thermal processing of Bi_2Ti_2O_7 thin films grown by chemical solution decomposition[J].Journal of Crystal Growth,2001(3/4):323-326.
[2] H WANG;S.X SHANG;W.F YAO .DIELECTRIC PROPERTIES OF Bi_2Ti_2O_7 FILMS GROWN ON Si(100) SUBSTRATE BY APMOCVD[J].Ferroelectrics: Letters Section,2002(1):117-123.
[3] Shao Wei Wang;Wei Lu;Ning Li .Insulating properties of rapid thermally processed Bi_2Ti_2O_7 thin films by a chemical solution Decomposition technique[J].Materials Research Bulletin: An International Journal Reporting Research on Crystal Growth and Materials Preparation and Characterization,2002(10):1691-1697.
[4] Jiang FY.;Liu RC. .Main characteristics of Pb0.85Sm0.1TiO3 ferroelectric thin films with Bi2Ti2O7 buffer layer[J].Journal of Crystal Growth,2004(1/4):385-388.
[5] Wang SW.;Shang SX.;Huang J.;Wang Z.;Wang M.;Wang H. .PZT thin films prepared by chemical solution decomposition using a Bi2Ti2O7 buffer layer[J].Journal of Crystal Growth,2000(4):388-392.
[6] Wenbibo W;Keigo F;Yoshihiro O et al.Bismuth Titanate Thin Films on Si with Buffer Layers Prepared by Laser Ablation and Their Electrical Properties[J].Japanese Journal of Applied Physics,1996,35:1560-1563.
[7] Yang C H;Wu H T;Yang D M .Effects of a Bi2Ti2O7 Seeding Layer on Properties of Bi3.5Nd0 5Ti3O12 Thin Film[J].Materials Letters,2007,61:4166-4168.
[8] Yang C H;Hu G D;Wen Z et al.Effects of Bi2Ti2O7 Buffer Layer on Memory Properties of BiFe0.95Mn0 05O3 Thin Film[J].Applied Physics Letters,2008,93:172906.
[9] Wang H;Fu L W;Shang S X et al.The Influence of Substrate Temperature and Annealing on Phase Formation and Crystalline Properties of Bismuth Titanate Films by APMOCVD[J].Journal of Physics D:Applied Physics,1994,27:393-395.
[10] Takashi N;Rusul M;Masaru S et al.Preparation of C-axis-oriented Bi4Ti3O12 Thin Films by Metalorganic Chemical Vapor Deposition[J].Japanese Journal of Applied Physics,1993,32:4086-4088.
[11] A. Q. Jiang;Z. X. Hu;L. D. Zhang .The induced phase transformation and oxygen vacancy relaxation in La-modified bismuth titanate ceramics[J].Applied physics letters,1999(1):114-116.
[12] Yang XN;Huang BB;Wang HB;Shang SX;Yao WF;Wei JY .Effect of La doping on structural and electrical properties of Bi2Ti2O7 thin films[J].Journal of Crystal Growth,2004(1/2):98-101.
[13] 吴玉程,宋林云,李云,李勇,李广海,郑治祥.Ce掺杂TiO2纳米粉体的制备及其光催化性能研究[J].人工晶体学报,2008(02):427-430.
[14] 于晓艳,荣宪伟,关承祥,赵朝中.Li/Nb比变化对Ce:Fe:LiNbO3晶体的光折变性能的影响[J].人工晶体学报,2008(03):538-542,537.
[15] 胡孟春,李忠宝,周刚,张建华,赵广军,彭太平,王振通,唐章奎,杨高照,李如荣,唐登攀,陈钰钰.国产YAP:Ce闪烁晶体的相对探测能力测量[J].人工晶体学报,2008(06):1458-1461.
[16] 周禾丰,侯建新,贾明理,王华,徐阳,卫芳芳.YAG: Ce3+,Pr3+荧光粉的制备和光谱特性研究[J].人工晶体学报,2009(03):629-632.
[17] 徐方,方奇术,王苏静,武安华,蒋成勇,陈红兵.非真空密闭条件下的Ce3+: LiYF4晶体生长[J].人工晶体学报,2009(04):813-817.
[18] Growth and electrical properties of Ce-doped Bi_2Ti_2O_7 thin films by chemical solution deposition[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2008(5 Pt.2):2651.
[19] 蒋民华.晶体物理[M].济南:山东科学技术出版社,1980:132-133.
[20] Wu XM.;Wang H.;Wang Z.;Shang SX.;Wang M.;Wang SW. .Preparation and characterization of Bi2Ti2O7 thin films by chemical solution deposition technique[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2000(1/2):30-32.
[21] 侯云,王民,许效红,王弘,王栋,韩辉.金属有机分解法制备Bi3.25La0.75Ti3O12薄膜[J].压电与声光,2003(01):55-57.
[22] DONGMEI YANG;CHANGHONG YANG;CHUNXUE YUAN;XIN YIN;JIANRU HAN .PREPARATION AND CHARACTERISTICS OF Sm-DOPED Bi_2Ti_2O_7 THIN FILMS[J].Surface review and letters,2007(1):147-150.
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