Structural and optical properties of vertically aligned InAs quantum dots (QDs) were embedded in Al0.5Ga0.5As spacer layers. The aligned QDs were grown at 520℃ in the Stranski-Krastanow (S-K) growth mode of molecular beam epitaxy. To improve QD characteristics, we employed a size- and density-controlled growth procedure in the upper layers. Measurements by reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) showed that both the size and density of the QDs. The temperature dependence of the wavelength-integrated photoluminescence (PL) intensity revealed the lnAs QD emission.
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