概述了近年来关于氧化镁磁隧道结磁电阻效应的最新研究进展,介绍了势垒层厚度、偏压、温度以及微结构等因素对磁电阻效应的影响.氧化镁磁隧道结的磁电阻效应与铁磁电极层和势垒层间的界面化学态与磁状态密切相关,势垒层厚度、偏压和温度等对磁电阻效应的影响关系表现出与传统氧化铝磁隧道结不同的变化特点.根据氧化镁磁隧道结磁电阻效应的研究状况,对其将来的发展进行了展望.
参考文献
| [1] | Tsymbal E Y;Mryasov O N;LeClair P R .Spin-dependent tunnelling in magnetic tunnel junctions[J].Journal of Physics:Condensed Matter,2003,15:R109. |
| [2] | Moodera JS.;Tanaka C.;De Groot CH.;Kim TH. .Spin-polarized tunnelling, magnetoresistance and interfacial effects in ferromagnetic junctions[J].Philosophical magazine.B.Physics of condensed matter, electronic, optical, and magnetic properties,2000(2):195-206. |
| [3] | Yuasa S;Nagahama T;Suzuki Y .Spin-polarized resonant tunneling in magnetic tunnel junctions[J].Science,2002(5579):234-237. |
| [4] | Reiss G;Bruckl H;Hutten A;Koop H;Meyners D;Thomas A;Kammerer S;Schmalhorst J;Brzeska M .New materials and applications for magnetic tunnel junctions[J].Physica Status Solidi, A. Applied Research,2004(8):1628-1634. |
| [5] | Moodera J S;Mathon G .Spin polarized tunneling in ferromagnetic junctions[J].Journal of Magnetism and Magnetic Materials,1999,200:248. |
| [6] | Miyazaki T;Tezuka N .Giant magnetic tunneling effect in Fe/Al2O3/Fe junction[J].Journal of Magnetism and Magnetic Materials,1995,139:L231. |
| [7] | Moodera J S;Kinder L R;Wong T M et al.Large magnetoresistance at room temperature in ferromagnetic thin film tunnnel junctions[J].Physical Review Letters,1995,74:3273. |
| [8] | Wang D;Nordman C;Danghton J M et al.70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and pinned layers[J].IEEE Transactions on Magnetics,2004,40(04):2269. |
| [9] | Butler W H;Zhang X G;Schulthess T C et al.Spin-dependent tunneling conductance of Fe |MgO| Fe sandwiches[J].Physical Review B:Condensed Matter,2001,63(05):4416. |
| [10] | Yuasa S;Fukushima A;Nagabama T et al.High tunnel magnetoresistance at room temperature in fully epitaxial Fe/MgO/Fe tunnel junctions due to coherent spin-polarized tunneling[J].Japanese Journal of Applied Physics,2004,43:L588. |
| [11] | Djayaprawira DD;Tsunekawa K;Nagai M;Maehara H;Yamagata S;Watanabe N;Yuasa S;Suzuki Y;Ando K .230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions[J].Applied physics letters,2005(9):2502-1-2502-3-0. |
| [12] | Lee Y M;Hayakawa J;lkeda S et al.Effect of electrode composition on the tunnel magnetoresistance of pseudo-spinvalve magnetic tunnel junction with a MgO tunnel barrier[J].Applied Physics Letters,2007,90:212507. |
| [13] | Mathon;Umerski J A .Theory of tunneling magnetoresistante of an epitaxial Fe/MgO/Fe(001) junction[J].Physical Review B:Condensed Matter,2001,63(22):0403R. |
| [14] | Yuasa S;Nagahama T;Fukushima A et al.Giant roomtemperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions[J].Nature Materials,2004,3:868. |
| [15] | Hayakawa J;Ikeda S;Matsukura F et al.Dependence of giant tunnel magnetoresistance of sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions on MgO barrier thickness and annealing temperature[J].Japanese Journal of Applied Physics,2005,44:L587. |
| [16] | Zhang S;Levy PM;Marley AC;Parkin SSP .Quenching of magnetoresistance by hot electrons in magnetic tunnel junctions[J].Physical review letters,1997(19):3744-3747. |
| [17] | Nozaki T;Hirohata A;Tezuka N;Sugimoto S;Inomata K .Bias voltage effect on tunnel magnetoresistance in fully epitaxial MgO double-barrier magnetic tunnel junctions[J].Applied physics letters,2005(8):2501-1-2501-3-0. |
| [18] | Ikeda S;Hayakawa J;Min Y et al.Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering[J].Japanese Journal of Applied Physics,2005,44:L1442. |
| [19] | Parkin S S P;Kasiser C;Panchula A et al.Giant tunneling magnetoresistance at room temperature with MgO(100) tunnel barriers[J].Nature Materials,2004,3:862. |
| [20] | X. Kou;J. Schmalhorst;A. Thomas;G. Reiss .Temperature dependence of the resistance of magnetic tunnel junctions with MgO barrier[J].Applied physics letters,2006(21):212115-1-212115-3-0. |
| [21] | Bae JY;Lim WC;Kim HJ;Lee TD;Kim KW;Kim TW .Compositional change of MgO barrier and interface in CoFeB/MgO/CoFeB tunnel junction after annealing[J].Journal of Applied Physics,2006(8):T8316-1-T8316-3-0. |
| [22] | Burton J D;Jaswal S S;Tsymbal E Y et al.Atomic and electronic structure of the CoFeB/MgO interface from first principles[J].Applied Physics Letters,2005,89(14):2507. |
| [23] | J. Schmalhorst;A. Thomas;G. Reiss;X. Kou;E. Arenholz .Influence of chemical and magnetic interface properties of Co-Fe-B/MgO/Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance[J].Journal of Applied Physics,2007(5):053907-1-053907-4-0. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%