采用放电等离子烧结(SPS)方法制备了赝二元合金(Ga2Te3)x-(Bi0.5Sb1.5Te3)1-x(x=0～0.2),并研究其电学性能.结果表明,在318 K时(Ga2Te3)x-(Bi0.5Sb1.5Te3)1-x(x=0.1)合金的电导率为3.7×104 Ω-1·m-1,是三元合金Bi0.5Sb1.5Te3的2倍,而Seebeck系数没有明显下降.从所测得的α和σ值可知,赝二元(Ga2Te3)x-(Bi0.5Sb1.5Te3)1-x(x=0.1)合金的功率因子最大,为2.1×10-3(W·K-2·m-1),是三元Bi0.5Sb1.5Te3合金的1.5倍.
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