ZnO是一种新型的II-VI族半导体材料,具有许多优异的性能.但由于ZnO存在诸多的本征施主缺陷(如空位氧Vo和间隙锌Zni),对受主产生高度自补偿作用,天然为n型半导体,难以实现p型转变.ZnO薄膜p型掺杂的实现是ZnO基光电器件的关键技术,也一直是ZnO研究中的主要课题,目前已取得重大进展,文章对此进行了详细阐述.
ZnO is a novel material for II--VI semiconductor. Researches indicate that n-type ZnO films can be well prepared, this is due to the high self-compensating process
on doping derived from the intrinsic donor defects such as oxygen vacancy (VO) and zinc interstitial (Zni atoms, so n-typed ZnO films are formed naturally
and p-type ZnO films are difficult to be prepared. How to realize p-type ZnO films through doping is the key step for application in the fields of ZnO-based opoelectrical
devices, in which great progresses have been made now. This paper summarized the recent advances in research on p-type ZnO.
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