为了系统地探讨Pb（ Zrx Ti1-x ） O3（ PZT）薄膜组成-结构-性能之间的规律，在室温和无蒸馏回流条件下，利用配制的前驱溶液PT（ Pb和Ti的金属有机物溶液）和PZ（ Pb和Zr的金属有机物溶液）及组合化学法在Pt/Ti/SiO2/Si衬底上简单快捷地制备了一系列Pb（ZrxTi1-x）O3薄膜．XRD分析表明，薄膜具有钙钛矿结构，择优取向为（111），晶格参数变化规律与传统方法制备的PZT薄膜的结果一致．x＝0．3的前驱体在200℃附近出现特殊的热分解现象．XPS测试结果证实薄膜成分基本符合理论值，SEM结果显示薄膜界面清晰，与基片接触良好，厚度在450 nm左右．电滞回线测试表明，富钛区样品剩余极化与矫顽场都较大；近准同型相界附近样品具有良好的铁电性，剩余极化较大且矫顽场较小；富锆区样品剩余极化与矫顽场较小，出现反铁电特征．
To systemically investigate the relationship between compositions, structures and properties of PZT thin films, PT and PZ precursor solutions were prepared quickly without distillation at room temperature, then a series of PZT thin films with different compositions were fabricated on Pt/Ti/SiO2/Si substrate by a combinatorial chemical solution deposition process. XRD analysis showed that the PZT thin films possessed perovskite structure with ( 111 )-preferred orientation, and the dependence of the lattice constants on the composition was in consistent with the results of PZT thin film prepared by traditional method. There were strong exothermic reactions for the samples with the Zr content x=0. 3 around 200 ℃. The composition basically corresponded to the theoretical composition value measured by XPS. SEM showed that the PZT thin film was attached on the Pt electrode closely, and the interface between the film and the substrate was clear. The thickness of the thin film was around 450nm. Ferroelectric hysteresis loops showed that the Ti-rich PZT thin films had large remnant polarization (Pr) and coercive field (Ec). The PZT thin films with the composition around the morphotropic phase boundary (MPB) showed favorable ferroelectric properties, Pr was larger, while Ec was lower. Zr-rich PZT thin films had low Pr and Ec , which exhibited antiferroelectric property.
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