利用磁控溅射法在玻璃衬底上制备了银掺杂ZnO薄膜,通过改变制备条件生长了一系列样品,样品退火后呈现P型导电特性.测量了样品的结构特性、光学性质和电学性质,实验表明薄膜厚度与淀积时间、溅射功率分别呈近似线性关系;薄膜晶体质量随溅射功率、背景气压的增加而降低;退火过程是银元素形成受主的重要环节,且退火能有效提高薄膜晶体质量,改善薄膜的光学性质和电学性质.分析了这些影响的机理和来源.
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