目的 结合金属辅助化学湿法刻蚀原理,在单晶硅表面制备高效减反的微纳米结构.方法 以单晶硅为基体,提出用Cu2+作为催化剂,在单晶硅表面两步化学刻蚀出多种微纳米减反结构,运用SEM/AFM表面分析方法,对形成的表面形貌和制备工艺进行分析,详细介绍了铜离子催化作用下制备微纳米结构的机理、反应现象及主要影响因素.结果 铜离子催化化学刻蚀单晶硅可以得到均匀分布的微纳米减反结构,所得结构在250～800 nm范围内的反射率达5％以下.结论 与传统碱性刻蚀技术相比,该技术所得微结构具有更高的光吸收率,并且稳定性好,容易控制.
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